D1985

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 14.0±0.5 Solder Dip 4.0 Collector to 2SD1985 base voltage 2SD1985A VCBO 60 80 V 1.3±0.2 1.4±0.1 Collector to 2SD1985 emitter voltage 2SD1985A VCEO 60 80 V 0.8±0.1 0.5 +0.2 –0.1 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VEBO ICP IC PC Tj Tstg 6 5 3 25 2 150 –55 to +150 V A A W ˚C ˚C 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SD1985 current 2SD1985A Collector cutoff 2SD1985 current 2SD1985A Emitter cutoff current Collector to emitter 2SD1985 voltage 2SD1985A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf VCE = 60V, IB =...