HT666

HI-SINCERITY MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. Features High Frequency Current Gain High Speed Switching Transistor TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) BVCBO Collector to Base Voltage......................................................................................................................... 75 V BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current ...................................................................