Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET
FS50VS-2
HIGH-SPEED SWITCHING USE
FS50VS-2
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions...
Description
MITSUBISHI Nch POWER MOSFET
FS50VS-2
HIGH-SPEED SWITCHING USE
FS50VS-2
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0 –0
+0.3
1 5 0.8
B
0.5
q w e wr
2.6 ± 0.4
¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 55m Ω ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ........... 105ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ±20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 1.2
4.5
Unit V V A A A A A W °C °C g
Feb.1999
L = 50µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS50VS-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-so...
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