Document
LESHAN RADIO COMPANY, LTD.
Zener Voltage Regulator Diodes
ƽ We declare that the material of product compliance with RoHS requirements.
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board*
T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,** T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temeprature **FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol PD
R QJA PD
R QJA T J , T stg
Ordering Information
Device LBZX84CXXXLT1G
LBZX84CXXXLT3G
Package SOT-23 SOT-23
Shipping 3000/Tape&Reel
10000/Tape&Reel
LBZX84CxxxLT1G
SERIES
3
1 2
SOT– 23 (TO–236AB) PLASTIC
3 Cathode
Max 225
1.8 556 300
2.4 417 -55to+125
Unit mW
mW/°C °C/W mW
mW/°C °C/W °C
1 Anode
1/5
LESHAN RADIO COMPANY, LTD.
GENERAL DATA — 225mW SOT-23
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device* LBZX84C2V4LT1G LBZX84C2V7LT1G LBZX84C3V0LT1G
Device Marking
Z11
Z12
Z13
VZ1 (Volts) @ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2 2.4 2.6 2.5 2.7 2.9 2.8 3 3.2
ZZT1 (W) @ IZT1 = 5 mA
100
100
95
VZ2 (V) @ IZT2 = 1 mA
(Note 3)
Min Max
1.7 2.1 1.9 2.4 2.1 2.7
ZZT2 (W)
@ IZT2 = 10 mA
VZ3 (V) @ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3 (W)
@ IZT3 = 20 mA
600 2.6 3.2
50
600 3 3.6 50
600 3.3 3.9
50
Max Reverse Leakage Current
IR mA
@
VR Volts
qVZ (mV/k) @ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0 f = 1 MHz
50 1 −3.5 0
450
20 1 −3.5 0
450
10 1 −3.5 0
450
LBZX84C3V3LT1G LBZX84C3V6LT1G
Z14 3.1 3.3 3.5 Z15 3.4 3.6 3.8
95 90
2.3 2.9 600 3.6 4.2 2.7 3.3 600 3.9 4.5
40 40
5 1 −3.5 0 5 1 −3.5 0
450 450
LBZX84C3V9LT1G LBZX84C4V3LT1G LBZX84C4V7LT1G LBZX84C5V1LT1G LBZX84C5V6LT1G LBZX84C6V2LT1G
Z16 3.7 3.9 4.1
W9 4 4.3 4.6
Z1
4.4 4.7
5
Z2 4.8 5.1 5.4
Z3
5.2 5.6
6
Z4 5.8 6.2 6.6
90 90 80 60 40 10
2.9 3.5 600 4.1 4.7
3.3 4
600 4.4 5.1
3.7 4.7 500 4.5 5.4
4.2 5.3
480
5 5.9
4.8 6
400 5.2 6.3
5.6 6.6 150 5.8 6.8
30 30 15 15 10 6
3
1 −3.5 −2.5
450
3 1 −3.5 0
450
3 2 −3.5 0.2 260
2 2 −2.7 1.2 225
1 2 −2.0 2.5 200
3 4 0.4 3.7 185
LBZX84C6V8LT1G
Z5 6.4 6.8 7.2
15
6.3 7.2
80
6.4 7.4
6
2 4 1.2 4.5 155
LBZX84C7V5LT1G
Z6
7 7.5 7.9
15
6.9 7.9
80
78
6
1 5 2.5 5.3 140
LBZX84C8V2LT1G
Z7 7.7 8.2 8.7
15
7.6 8.7
80
7.7 8.8
6
0.7 5 3.2 6.2
135
LBZX84C9V1LT1G
Z8 8.5 9.1 9.6
15
8.4 9.6 100 8.5 9.7
8
0.5 6 3.8 7.0
130
LBZX84C10LT1G LBZX84C11LT1G LBZX84C12LT1G
Z9 9.4 10 10.6 20
9.3 10.6
150
9.4 10.7
10
0.2 7 4.5 8.0
130
Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
LBZX84C13LT1G LBZX84C15LT1G LBZX84C16LT1G LBZX84C18LT1G LBZX84C20LT1G LBZX84C22LT1G
Y3 12.4 13 14.1 30 12.3 14
170 12.5 14.2
15
0.1 8 7.0 11.0
120
Y4 13.8 15 15.6 30
13.7 15.5 200 13.9 15.7
20
0.05 10.5 9.2 13.0
110
Y5 15.3 16 17.1 40
15.2 17
200 15.4 17.2
20
0.05 11.2 10.4 14.0
105
Y6 16.8 18 19.1 45
16.7 19
225 16.9 19.2
20
0.05 12.6 12.4 16.0
100
Y7 18.8 20 21.2 55
18.7 21.1 225 18.9 21.4
20 0.05 14 14.4 18.0
85
Y8 20.8 22 23.3 55
20.7 23.2 250 20.9 23.4
25 0.05 15.4 16.4 20.0
85
LBZX84C24LT1G
Device LBZX84C27LT1G LBZX84C30LT1G
Y9
Device Marking
Y10 Y11
22.8 24 25.6
VZ1 Below @ IZT1 = 2 mA
Min Nom Max 25.1 27 28.9 28 30 32
70 22.7 25.5 250 22.9 25.7 25
ZZT1 Below
@ IZT1 = 2 mA
VZ2 Below @ IZT2 = 0.1 m-
A
Min Max
ZZT2 Below
@ IZT4 = 0.5 mA
VZ3 Below @ IZT3 = 10 mA
Min Max
ZZT3 Below
@ IZT3 = 10 mA
80
25 28.9 300 25.2 29.3
45
80 27.8 32 300 28.1 32.4 50
0.05 16.8 18.4 22.0
80
Max Reverse Leakage Current
IR mA
@
VR (V)
qVZ (mV/k) Below @ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0 f = 1 MHz
0.05 18.9 21.4 25.3
70
0.05 21 24.4 29.4
70
LBZX84C33LT1G LBZX84C36LT1G LBZX84C39LT1G LBZX84C43LT1G LBZX84C47LT1G LBZX84C51LT1G
Y12 31 33 35 Y13 34 36 38 Y14 37 39 41 Y15 40 43 46 Y16 44 47 50 Y17 48 51 54
80 30.8 35 90 33.8 38 130 36.7 41 150 39.7 46 170 43.7 50 180 47.6 54
325 31.1 35.4 55 0.05 23.1 27.4 33.4 350 34.1 38.4 60 0.05 25.2 30.4 37.4 350 37.1 41.5 70 0.05 27.3 33.4 41.2 375 40.1 46.5 80 0.05 30.1 37.6 46.6 375 44.1 50.5 90 0.05 32.9 42.0 51.8 400 48.1 54.6 100 0.05 35.7 46.6 57.2
70 70 45 40 40 40
LBZX84C56LT1G
Y18 52 56 60
200 51.5 60
425 52.1 60.8 110 0.05 39.2 52.2 63.8
40
LBZX84C62LT1G
Y19 58 62 66
215 57.4 66
450 58.2 67
120 0.05 43.4 58.8 71.6
LBZX84C68LT1G
Y20 64 68 72
240 63.4 72
475 64.2 73.2 130 0.05 47.6 65.6 79.8
LBZX84C75LT1G
Y21 70 75 79
255 69.4 79
500 70.3 80.2 140 0.05 52.5 73.4 88.6
Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
35 35 35
2/5
θ VZ, TEMPERATURE COEFFICIENT (mV/ °C)
LESHAN RADIO.