PD- 95215A
IRF7353D2PbF
l Co-Pack HEXFET® Power MOSFET and
Schottky Diode
l Ideal For Buck Regulator Applications A
...
PD- 95215A
IRF7353D2PbF
l Co-Pack HEXFET® Power MOSFET and
Schottky Diode
l Ideal For Buck
Regulator Applications A
l N-Channel HEXFET power MOSFET
l Low VF
Schottky Rectifier l Generation 5 Technology
A S
l SO-8 Footprint
G
l Lead-Free
FETKYä MOSFET /
Schottky Diode
18 27 36 45
Top View
K VDSS = 30V
K
D RDS(on) = 0.029Ω
D
Schottky VF = 0.52V
Description
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and
Schottky diodes offers the designer an innovative, board space saving solution for switching
regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Continuous Drain Current Ã
Pulsed Drain Current À Power Dissipation Ã
Linear Derating Factor
6.5 5.2 52 2.0 1.3 16
VGS dv/dt
Gate-to-Source Voltage Peak Diode Recovery dv/dt Á
± 20 -5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Units A
W
m...