Power MOSFET
PD - 95363
SMPS MOSFET
IRF3708PbF IRF3708SPbF IRF3708LPbF
Applications
l High Frequency DC-DC Isolated Converters wit...
Description
PD - 95363
SMPS MOSFET
IRF3708PbF IRF3708SPbF IRF3708LPbF
Applications
l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use
l High Frequency Buck Converters for Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
12mΩ
ID
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3708
D2Pak IRF3708S
TO-262 IRF3708L
Absolute Maximum Ratings
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C
TJ , TSTG
Parameter Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
Max. 30 ±12 62 52 248 87 61 0.58
-55 to + 175
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)*
Typ. ––– 0.50 ––– –––
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Max. 1.73 ––– 62 40
Units V V
A
W W W/°C °C
Units
°C/W
Notes through are on page 10 www.irf.com
1
6/10/04
IRF3708/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ...
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