IRF3708LPbF

PD - 95363 SMPS MOSFET IRF3708PbF IRF3708SPbF IRF3708LPbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 62A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3708 D2Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 30 ±12 62 52 248 87 61 0.58 -55 to + 175 Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)* Typ. ––– 0.50 ––– ––– * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Max. 1.73 ––– 62 40 Units V V A W W W/°C °C Units °C/W Notes  through „ are on page 10 www.irf.com 1 6/10/04 IRF3708/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ...