20A N-Channel MOSFET
AOT20N60/AOTF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N60 & AOTF20N60 have been f...
Description
AOT20N60/AOTF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT20N60L&AOTF20N60L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
700V@150℃ 20A < 0.37Ω
D
G
DS G
S GD
AOT20N60
AOTF20N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT20N60
AOTF20N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
20 20* 12 12*
80 6.5 630 1260 5
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
50 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT20N60 65 0.5
AOTF20N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum ...
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