AOTF20N60

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT20N60L&AOTF20N60L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 700V@150℃ 20A < 0.37Ω D G DS G S GD AOT20N60 AOTF20N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20N60 AOTF20N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20* 12 12* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT20N60 65 0.5 AOTF20N60 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum ...