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FS5AS-06 Dataheets PDF



Part Number FS5AS-06
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Datasheet FS5AS-06 DatasheetFS5AS-06 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE FS5AS-06 OUTLINE DRAWING 1.5 ± 0.2 Dimensions in mm 0.5 ± 0.1 6.5 5.0 ± 0.2 r 5.5 ± 0.2 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡10V DRIVE ¡VDSS .. 60V ¡rDS (ON) (MAX) .. 0.16 Ω ¡ID ..

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MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE FS5AS-06 OUTLINE DRAWING 1.5 ± 0.2 Dimensions in mm 0.5 ± 0.1 6.5 5.0 ± 0.2 r 5.5 ± 0.2 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 0.16 Ω ¡ID ............................................................................................ 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 45ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ±20 5 20 5 5 20 20 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS5AS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 — — 2.0 — — — — — — — Typ. — — — 3.0 0.12 0.24 4.0 280 120 35 15 8 18 9 1.0 — 45 Max. — ±0.1 0.1 4.0 0.16 0.32 — — — — — — — — 1.5 6.25 — Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 30V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω — — — — — — IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2 tw = 10ms 32 100ms 1ms DC 10ms 24 16 8 0 0 50 100 150 200 10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 8V 7V Tc = 25°C Pulse Test 6V CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 8V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) PD = 20W 7V 8 12 Tc = 25°C Pulse Test 6 8 6V 4 5V 4 5V 2 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-.


FS50VSJ-3 FS5AS-06 FS5ASH-06


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