DTU20N10

N-Channel 100 V (D-S) MOSFET DTU20N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.066 at VGS = 10 V 0.080 at VGS = 4.5 V ID (A) 20 15.2 Qg (Typ.) 19.8 FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: TO-252 D G APPLICATIONS DC/DC Converters DC/AC Inverters Motor Drives GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °Cc VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 ± 20 20 15.2 25 15 11.25 41.7b 2.1 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Base on TC = 25 °C. Symbol RthJA RthJC Limit 60 3 Unit °C/W 1 DTU20N10 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = ...