Document
TK15A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK15A60D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
0.69 ± 0.15 Ф0.2 M A
2.6 ± 0.1 4.5 ± 0.2
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
600
V
±30
V
15 A
60
50
W
527
mJ
15
A
5.0
mJ
150
°C
−55 to 150
°C
2.54
2.54
123
0.64 ± 0.15
1: Gate 2: Drain 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.1 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
Start of commercial production
2009-01
1
2013-11-01
TK15A60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Total gate charge Gate-source charge Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±1
μA
⎯
⎯
10
μA
600 ⎯
⎯
V
2.0
⎯
4.0
V
⎯ 0.31 0.37 Ω
2.4 8.5
⎯
S
⎯ 2600 ⎯
⎯
11
⎯
pF
⎯ 280 ⎯
tr
10 V
ID = 7.5 A VOUT
⎯
50
⎯
VGS
0V
ton
50 Ω
RL = 26 Ω ⎯
100
⎯
ns
tf
⎯
25
⎯
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯ 150 ⎯
Qg
⎯
45
⎯
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
⎯
28
⎯
nC
Qgd
⎯
17
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR IDRP VDSF
trr Qrr
Test Condition
⎯
⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
15
A
⎯
⎯
60
A
⎯
⎯
−1.7
V
⎯ 1700 ⎯
ns
⎯
26
⎯
μC
Marking
K15A60D
Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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2013-11-01
DRAIN CURRENT ID (A)
ID – VDS
20 COMMON SOURCE
Tc = 25°C
10 8
7.25
PULSE TEST
16
7
12
6.75
6.5 8
6 4
VGS = 5.5 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE VDS
10
(V)
ID – VGS
50 COMMON SOURCE
VDS = 20 V PULSE TEST 40
30
20 25
10
100
Tc = −55°C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS
10
(V)
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
TK15A60D
ID – VDS
40 COMMON SOURCE 10
8
Tc = 25°C
PULSE TEST
7.75
30 7.5
7.25 20
7
10
6.5
VGS = 6 V
0
0
10
20
30
DRAIN-SOURCE VOLTAGE VDS
40
(V)
VDS – VGS
10 COMMON SOURCE
Tc = 25°C
PULSE TEST 8
6 ID = 15 A
4
7.5 2
3.75
0
0
4
8
12
16.