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K15A60D Dataheets PDF



Part Number K15A60D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TK15A60D
Datasheet K15A60D DatasheetK15A60D Datasheet (PDF)

TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 1.14 ± 0.15 2.8 MAX. 13 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.1.

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TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK15A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A Unit: mm 2.7 ± 0.2 3.9 3.0 15.0 ± 0.3 1.14 ± 0.15 2.8 MAX. 13 ± 0.5 Absolute Maximum Ratings (Ta = 25°C) 0.69 ± 0.15 Ф0.2 M A 2.6 ± 0.1 4.5 ± 0.2 Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V ±30 V 15 A 60 50 W 527 mJ 15 A 5.0 mJ 150 °C −55 to 150 °C 2.54 2.54 123 0.64 ± 0.15 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.1 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 Start of commercial production 2009-01 1 2013-11-01 TK15A60D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition Min Typ. Max Unit IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ ⎯ ±1 μA ⎯ ⎯ 10 μA 600 ⎯ ⎯ V 2.0 ⎯ 4.0 V ⎯ 0.31 0.37 Ω 2.4 8.5 ⎯ S ⎯ 2600 ⎯ ⎯ 11 ⎯ pF ⎯ 280 ⎯ tr 10 V ID = 7.5 A VOUT ⎯ 50 ⎯ VGS 0V ton 50 Ω RL = 26 Ω ⎯ 100 ⎯ ns tf ⎯ 25 ⎯ VDD ≈ 200 V toff Duty ≤ 1%, tw = 10 μs ⎯ 150 ⎯ Qg ⎯ 45 ⎯ Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A ⎯ 28 ⎯ nC Qgd ⎯ 17 ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/μs Min Typ. Max Unit ⎯ ⎯ 15 A ⎯ ⎯ 60 A ⎯ ⎯ −1.7 V ⎯ 1700 ⎯ ns ⎯ 26 ⎯ μC Marking K15A60D Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 2 2013-11-01 DRAIN CURRENT ID (A) ID – VDS 20 COMMON SOURCE Tc = 25°C 10 8 7.25 PULSE TEST 16 7 12 6.75 6.5 8 6 4 VGS = 5.5 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS 10 (V) ID – VGS 50 COMMON SOURCE VDS = 20 V PULSE TEST 40 30 20 25 10 100 Tc = −55°C 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 (V) DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) TK15A60D ID – VDS 40 COMMON SOURCE 10 8 Tc = 25°C PULSE TEST 7.75 30 7.5 7.25 20 7 10 6.5 VGS = 6 V 0 0 10 20 30 DRAIN-SOURCE VOLTAGE VDS 40 (V) VDS – VGS 10 COMMON SOURCE Tc = 25°C PULSE TEST 8 6 ID = 15 A 4 7.5 2 3.75 0 0 4 8 12 16.


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