DNA30E2200FE

High Voltage Standard Rectifier Single Diode Part number DNA30E2200FE 51 DNA30E2200FE VRRM I FAV VF = = = 2200 V 30 A 1.22 V Backside: isolated Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: i4-Pac ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130123c Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 2200 V VR = 2200 V forward voltage drop IF = 30 A IF = 60 A IF = 30 A IF = 60 A average forward current TC = 110°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3...