ZXMP3A17E6

30V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP3A17E6 SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMP3A17E6TA ZXMP3A17E6TC REEL SIZE 7” 13” TAPE QUANTITY WIDTH PER REEL 8mm 3000 units 8mm 10000 units PINOUT DEVICE MARKING 317 Top View PROVISIONAL ISSUE C - AUGUST 2002 1 ZXMP3A17E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT -30 20 -4.0 -3.2 -3.2 -14.4 -2.5 -14.4 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) Junction to Ambient (b) RθJA RθJA 113 °C/W 73 ...