PowerTrench MOSFET. MT4600 Datasheet


MT4600 MOSFET. Datasheet pdf. Equivalent


MT4600


Dual N & P-Channel PowerTrench MOSFET


MT4600

Dual N & P-Channel Po werTrench® MOSFET
Features
• N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V
• P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 85mΩ (max.) @ VGS = -2.5V

General Description
These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol
VDSS VGSS ID PD
TJ, TSTG

Parameter

Drain-Source Voltage Gate-Source Voltage

Drain Current - Continuous - Pulsed

(Note 1a)

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

N-CH

P-CH

30 -30 ±12 ±12
5 -4.6 20 -19
2.5 1.6 1 0.9 -55 to +150

78 40


Units
V V A W °C °C/W °C/W

Package Marking and Ordering Informa...



MT4600
MT4600
Dual N & P-Channel Po werTrench® MOSFET
Features
N-Channel
30V/5A,
RDS (ON) = 28mΩ (max.) @ VGS =4.5V
RDS (ON) = 38mΩ (max.) @ VGS =2.5V
P-Channel
-30V/-4.6A,
RDS (ON) = 63mΩ (max.) @ VGS =-4.5V
RDS (ON) = 85mΩ (max.) @ VGS = -2.5V
General Description
These dual N and P-Channel enhancement mode
power field effect transistors are produced using
MOS-TECH Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
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‡ '&'&SULPDU\EULGJH
‡ '&'&6\QFKURQRXVUHFWLILFDWLRQ
‡ +RWVZDS
‡)DQGULYH
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
N-CH
P-CH
30 -30
±12 ±12
5 -4.6
20 -19
2.5
1.6
1
0.9
-55 to +150
78
40

Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT4600
MT4600
13"
 
Tape width
12mm
Quantity
2500 units
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