LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon
• Moisture Sensitivity Level: 1 • ESD Rating – Huma...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VCEO
Collector–Base Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VCBO
Emitter–Base Voltage LBC846
LBC847, LBC850 LBC848, LBC849
VEBO
Collector Current – Continuous THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (Note 1.)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
Value
65 45 30
80 50 30
6.0 6.0 5.0 100
Max 150
2.4 833
–55 to +150
Unit Vdc
Vdc
Vdc
mAdc Unit mW mW/°C °C/W °C
LBC846AWT1G Series
3
1 2
SOT–323 /SC–70
1 B ASE
3 COLLECT OR
2 EMIT T ER
MARKING DIAGRAM 3
xx
xx= Device Marking (See Table Below)
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LESHAN RADIO COMPANY, LTD.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
LBC846AWT1G
1A
LBC846AWT3G
1A
LBC846BWT1G
1B
LBC846BWT3G
1B
LBC847AWT1G
1E
LBC847AWT3G
1E
LBC847BWT1G
1F
LBC847BWT3G
1F
LBC847CWT1G
1G
LBC847CWT3G
1G
LBC848AWT1G
1J
LBC848AWT3G
1J
LBC848BWT1G
1K
LBC848BWT3G
1K
LBC848CWT1G
1L
LBC848CWT3G LBC849BWT1G
1L 2B
LBC849BWT3G
2B
LBC849CWT1G
2C
LBC849CWT3G
2C
LBC850BWT1G
2F
LBC850BWT3G LBC850CWT1G
2F 2G
LBC850CWT3G
...