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L2SC4226T1G

Leshan Radio Company

High-Frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply v...


Leshan Radio Company

L2SC4226T1G

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Description
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA High Gain |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA Small Mini Mold Package EIAJ: SC-70 Driver Marking L2SC4226T1G;S-L2SC4226T1G= R2 Ordering Information Device L2SC4226T1G S-L2SC4226T1G L2SC4226T3G S-L2SC4226T3G Marking R2 R2 Shipping 3000/Tape&Reel 10000/Tape&Reel The information in this document is subject to change without notice. Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 100 150 150 –65 to +150 V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure S...




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