LMBTH10WT1G

LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBTH10WT1G S-LMBTH10WT1G LMBTH10WT3G S-LMBTH10WT3G Marking 3E 3E Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Symbol V CEO V CBO V EBO IC Value 25 30 3.0 50 Unit Vdc Vdc Vdc mA THERMAL CHARACTERISTICS LMBTH10WT1G S-LMBTH10WT1G 3 1 2 SC-70/SOT–323 1 BASE 3 COLLECTOR 2 EMITTER Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD R θJA PD R θJA T J , Tstg Max 150 1.2 833 200 1.6 625 –55to+150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = ...