Purpose Transistors. LBC817-40WT1G Datasheet


LBC817-40WT1G Transistors. Datasheet pdf. Equivalent


LBC817-40WT1G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LBC817-40WT1G S-LBC817-40WT1G

MAXIMUM RATINGS

Rating

Symbol

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage

V CEO V CBO V EBO

Collector Current — Continuous I C

Value 45 50 5.0 500

Unit V V V
mAdc

THERMAL CHARACTERISTICS

Characteristic Total Device Dissipation FR- 5 Board (1)
T A =25 °C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Symbol PD

Max 150

Unit mW

R θJA PD

1.2 mW/°C 833 °C/W 200 mW

R θJA T J , Tstg

1.6 625 –55to+150

mW/°C °C/W
°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter–Base Breakdown Voltage (I E = 1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

V (BR)CEO V (BR)CES V (BR)EBO
I CBO

45 50 5.0
— —
...



LBC817-40WT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-40WT1G
S-LBC817-40WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
Unit
mW
R θJA
PD
1.2 mW/°C
833 °C/W
200 mW
R θJA
T J , Tstg
1.6
625
–55to+150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
50
5.0
Typ
3
1
2
SOT–323
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—V
—V
—V
100 nA
5.0 µA
Rev.O 1/3

LBC817-40WT1G
LESHAN RADIO COMPANY, LTD.
LBC817-40WT1G
S-LBC817-40WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C= 100 mA, V CE = 1.0 V)
h FE
250 — 600
(I C = 500 mA, V CE = 1.0 V)
40 — —
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
V CE(sat)
V BE(on)
fT
C obo
ORDERING INFORMATION
Device
LBC817-40WT1G
LBC817-40WT3G
Marking
YM
YM
Shipping
3000/Tape&Reel
10000/Tape&Reel
— — 0.7 V
— — 1.2 V
100 — — MHz
— 10 — pF
Rev.O 2/3




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