LBC857CWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage V CEO V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G 3 1 2 SOT– 323 / SC-70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 1 BASE DEVICE MARKING S-LBC856AWT1G= 3A; S-LBC856BWT1G= 3B;S-LBC857AWT1G= 3E; S-LBC857BWT1G = 3F; S-LBC857CWT1G= 3G;S-LBC858AWT1G= 3J; S-LBC858BWT1G= 3K;S-LBC858CWT1G= 3L 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857B Only LBC858 Series ...