LBC857CWT1G Purpose Transistors Datasheet

LBC857CWT1G Datasheet, PDF, Equivalent


Part Number

LBC857CWT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download LBC857CWT1G Datasheet


LBC857CWT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
V CEO
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
CWT1G
LBC858AWT1G, BWT1G
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC857AWT1G, BWT1G
CWT1G
S-LBC858AWT1G, BWT1G
CWT1G
3
1
2
SOT– 323 / SC-70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1
BASE
DEVICE MARKING
S-LBC856AWT1G= 3A; S-LBC856BWT1G= 3B;S-LBC857AWT1G= 3E; S-LBC857BWT1G = 3F;
S-LBC857CWT1G= 3G;S-LBC858AWT1G= 3J; S-LBC858BWT1G= 3K;S-LBC858CWT1G= 3L
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857B Only
LBC858 Series
Collector–Base Breakdown Voltage
(IC = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65 —
V (BR)CEO
– 45
v
– 30 —
– 80 —
V (BR)CES
– 50
—v
– 30 —
– 80 —
V (BR)CBO
– 50
v
– 30 —
– 5.0
V (BR)EBO
– 5.0
v
– 5.0
I CBO — — – 15 nA
— — – 4.0 µA
Rev.O 1/6

LBC857CWT1G
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G
S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
ON CHARACTERISTICS
DC Current Gain
h FE
(I C = –2.0 mA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
125
220
LBC857C, LBC858C
420
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz)
Noise Figure
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 k, f =1.0 kHz, BW= 200 Hz)
V CE(sat)
V BE(sat)
V BE(on)
fT
Cob
NF
– 0.6
100
––
ORDERING INFORMATION ( Pb– Free )
Device
Package
LBC856AWT1G series
SOT-23
LBC856AWT3G series
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
Typ Max Unit
180 250
290 475
520 800
– 0.7
– 0.9
– 0.3
– 0.65
– 0.75
– 0.82
V
V
V
— — MHz
— 4.5 pF
–– 10 dB
Rev.O 2/6


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors PNP Silicon These tran sistors are designed for general purpos e amplifier applications. They are hous ed in the SOT–323/ SC–70 which is d esigned for low power surface mount app lications. Features We declare that the material of product compliance with Ro HS requirements. MAXIMUM RATINGS Ratin g Symbol Collector–Emitter Voltage Collector–Base Voltage V CEO V CBO Emitter–Base Voltage V EBO Collecto r Current — Continuous I C BC856 – 65 –80 –5.0 –100 BC857 –45 – 50 –5.0 –100 BC858 –30 –30 – 5.0 –100 Unit V V V mAdc LBC856AWT1 G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC85 8AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1 G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AW T1G, BWT1G CWT1G 3 1 2 SOT– 323 / SC- 70 THERMAL CHARACTERISTICS Characteris tic Total Device Dissipation FR– 5 Bo ard, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Stora ge Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 1 BASE DEVICE MA.
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