L2SA2030M3T5G

LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA 3) We declare that the material of product compliance with RoHS requirements. 4 ) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SA2030M3T5G S-L2SA2030M3T5G 3 2 1 SOT –723 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Limits −15 −12 −6 −500 −1 Unit V V V mA A∗ 1 BASE Collector power dissipation PC 150 mW Junction temperature Storage temperature ∗Single pulse, Pw=1ms Tj 150 °C Tstg −55 to +150 °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −10µA Collector cutoff current ICBO − − −100 nA VCB= −15V Emitter cutoff current IEBO − − −100 nA VEB= −6V DC current transfer ratio hFE 270 − 680 − VCE= −2V / IC= −10mA Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC= −200mA / IB= −10mA Tr...