L2SC4083NWT1G Amplifier Transistor Datasheet

L2SC4083NWT1G Datasheet, PDF, Equivalent


Part Number

L2SC4083NWT1G

Description

High-Frequency Amplifier Transistor

Manufacture

Leshan Radio Company

Total Page 2 Pages
Datasheet
Download L2SC4083NWT1G Datasheet


L2SC4083NWT1G
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
zand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC4083NWT1G
S-L2SC4083NWT1G
3
Ordering Information
Device
L2SC4083NWT1G
S-L2SC4083NWT1G
L2SC4083NWT1G
S-L2SC4083NWT1G
Marking
4N
4N
Shipping
3000/Tape&Reel
10000/Tape&Reel
1
2
SC-70/SOT-323
Absolute maximum ratings (Ta=25 oC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
20
11
3
50
0.15
150
- 55~+150
Unit
V
V
V
mA
W
oC
oC
1
BASE
3
COLLECTOR
2
EMITTER
Driver Marking
L2SC4083NWT1G;S-L2SC4083NWT1G=4N
Electrical characteristics (Ta=25 oC)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
rbb'·Cc
NF
20
11
3
56
1.4
Typ.
3.2
0.8
4
3.5
Max.
0.5
0.5
0.5
120
1.5
12
Unit
V
V
V
uA
uA
V
GHz
pF
ps
dB
Conditions
IC = 10 µA
IC = 1mA
IE = 10 µA
VCB = 10V
VEB = 2V
IC/IB = 10mA/5mA
VCE/IC = 10V/5mA
VCB = 10V , IC = 10mA , f = 500MHz
VCB = 10V , IE = 0A , f = 1MHz
VCB = 10V , IC = 10mA , f = 31.8MHz
VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50
Rev.O 1/2

L2SC4083NWT1G
LESHAN RADIO COMPANY, LTD.
L2SC4083NWT1G ;S-L2SC4083NWT1G
SC-70 / SOT-323
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
L
0.9
0.035
0.7
0.028
1.9
0.075
ǒ ǓSCALE 10:1
mm
inches
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15 1.24 1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
GENERIC
MARKING DIAGRAM
XXM
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Rev.O 2/2


Features LESHAN RADIO COMPANY, LTD. High-Frequen cy Amplifier Transistor We declare tha t the material of product compliance wi th RoHS requirements. S- Prefix for Aut omotive and Other Applications Requirin g Unique Site zand Control Change Requi rements; AEC-Q101 Qualified and PPAP Ca pable. L2SC4083NWT1G S-L2SC4083NWT1G 3 Ordering Information Device L2SC4083 NWT1G S-L2SC4083NWT1G L2SC4083NWT1G S-L 2SC4083NWT1G Marking 4N 4N Shipping 3 000/Tape&Reel 10000/Tape&Reel 1 2 SC-7 0/SOT-323 Absolute maximum ratings (Ta =25 oC) Parameter Collector-base volta ge Collector-emitter voltage Emitter-ba se voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO V EBO IC PC Tj Tstg Limits 20 11 3 50 0. 15 150 - 55~+150 Unit V V V mA W oC oC 1 BASE 3 COLLECTOR 2 EMITTER Driver Marking L2SC4083NWT1G;S-L2SC4083NWT1G= 4N Electrical characteristics (Ta=25 o C) Parameter Symbol Min. Collector- base breakdown voltage Collector-emitter breakdown voltage Emit.
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