Purpose Transistors. LBC846BWT1G Datasheet


LBC846BWT1G Transistors. Datasheet pdf. Equivalent


LBC846BWT1G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ORDERING INFORMATION ( Pb– Free )

Device
LBC846AWT1G S-LBC846AWT1G LBC846AWT3G S-LBC846AWT3G

Package SC-70
SC-70

Shipping 3000/Tape&Reel 10000/Tape&Reel

MAXIMUM RATINGS

LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G
CWT1G LBC848AWT1G,BWT1G
CWT1G S-LBC846AWT1G,BWT1G S-LBC847AWT1G,BWT1G
CWT1G S-LBC848AWT1G,BWT1G
CWT1G

Rating

Symbol

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

BC846 65 80 6.0 100

BC847 45 50 6.0 100

BC848 30 30 5.0 100

Unit V V V
mAdc

3
1 2
SOT–323 /SC–70

THERMAL CHARACTERISTICS Characteristic Total Device Dissipation
Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Symbol PD
R θJA T J , T stg

Max Unit 150 mW

833 –55 to +150

°C/W °C

1 BASE

3 COLLECTOR
2 EMITTER

DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC ...



LBC846BWT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION ( Pb– Free )
Device
LBC846AWT1G
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
3
1
2
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(IC = 10 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
Typ Max Unit
——
— —v
——
——
— —v
——
——
— —v
——
——
— —v
——
— 15 nA
— 5.0 µA
Rev.O 1/9

LBC846BWT1G
LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G
S-LBC846AWT1G,BWT1G, S-LBC847AWT1G,BWT1G, CWT1G, S-LBC848AWT1G,BWT1G,CWT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min
ON CHARACTERISTICS
DC Current Gain
(I C = 2.0 mA, V CE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
h FE
V CE(sat)
V BE(sat)
V BE(on)
110
200
420
580
Typ Max Unit
180 220
290 450
520 800
— 0.25
— 0.6
0.7 —
0.9 —
660 700
— 770
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
f T 100 — — MHz
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Cobo — — 4.5 pF
Noise Figure (I C = 0.2 mA,
LBC846A, LBC847A,L BC848A
NF
dB
V CE = 5.0 Vdc, R S = 2.0 k,
LBC846B, LBC847B,L BC848B
— — 10
f = 1.0 kHz, BW = 200 Hz)
LBC847C, LBC848C
— — 4.0
LBC846A, LBC847A, LBC848A
300
150°C
200
25°C
100 55°C
VCE = 1 V
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.0
0.9 IC/IB = 20
55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.18
0.16
IC/IB = 20
150°C
0.14
0.12
0.10
25°C
0.08
0.06
55°C
0.04
0.02
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
55°C
0.8 25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
Rev.O 2/9




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