08TB70B

KIAULTRAFAST FAST RECOVERY DIODE 8.0A，650V SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 08TB70B This series are state−of−the−art devices designed for use in switching power supplies, inverters and as free wheeling diodes. 2. Features  Ultrafast 25 nanosecond recovery time  175°C operating junction temperature  Popular TO−220 package  Epoxy meets UL 94 V−0 @ 0.125 in  Low forward voltage  Low leakage current  High temperature glass passivated junction  Reverse voltage to 650 V  Pb−free packages are available 3. Mechanical Characteristics  Case: epoxy, molded  Weight: 1.9 grams (approximately)  Finish: all external surfaces corrosion resistant and terminal  Leads are readily solderable  Lead temperature for soldering purposes: 260°C max for 10 seconds 4. Pin configuration Pin （TO220） 1 3 Pin(TO263) 1 2 3 Function Cathode Anode Function Cathode Cathode Anode 1 of 2 Rev 1.1 JAN 2014 KIA SEMICONDUCTORS FAST RECOVERY DIODE 8.0A，650V 08TB70B 5. Maximum ratings Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current Total device, (Rated VR), TC = 150°C Peak repetitive forward current (Rated VR, square wave, 20 kHz), TC = 150°C Nonrepetitive peak surge current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating junction temperature and storage temperature range Symbol VRRM VRW M VR IF(AV) IFM IFSM TJ,Tstg Rating 650 8.0 16 100 -65 to +175 Units V A...