2SK3352
Ordering number : ENN8125
2SK3352
N-Channel Silicon MOSFET
2SK3352 General-Purpose Switching Device
Applications
Featu...
Description
Ordering number : ENN8125
2SK3352
N-Channel Silicon MOSFET
2SK3352 General-Purpose Switching Device
Applications
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current
V(BR)DSS IDSS
Gate-to-Source Leakage Current Cutoff Voltage
IGSS VGS(off)
Forward Transfer Admittance Static Drain-to-Source On-State Resistance
yfs RDS(on)1 RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time Turn-OFF Delay Time Fall Time Marking : K3352
tr td(off)
tf
ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=10A, VGS=4.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings 30
±20 45 80
1.65 40
150 --55 to +150
Unit V V A A W W °C °C
min 30
1.0 19
Ratings typ
max
Unit
V
1 µA
±10 µA
2.4 V
27 S
11 15 mΩ
15 21 mΩ
1400
pF
420 pF
210 pF
14 ns
530 ns
100 ns
...
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