K3352 2SK3352 Datasheet

K3352 Datasheet, PDF, Equivalent


Part Number

K3352

Description

2SK3352

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download K3352 Datasheet


K3352
Ordering number : ENN8125
2SK3352
N-Channel Silicon MOSFET
2SK3352 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
DC / DC converter applications.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate-to-Source Leakage Current
Cutoff Voltage
IGSS
VGS(off)
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
yfs
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : K3352
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
ID=10A, VGS=4.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
30
±20
45
80
1.65
40
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
30
1.0
19
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.4 V
27 S
11 15 m
15 21 m
1400
pF
420 pF
210 pF
14 ns
530 ns
100 ns
150 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005QA MS IM TA-2658 No.8125-1/4

K3352
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7513-002
10.2
2SK3352
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=10V, ID=20A
VDS=10V, VGS=10V, ID=20A
VDS=10V, VGS=10V, ID=20A
IS=45A, VGS=0V
Ratings
min typ max
Unit
28 nC
4.6 nC
5 nC
1.0 1.2 V
Package Dimensions
unit : mm
7001-003
4.5
1.3
10.2 4.5
1.3
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
12 3
0.8
1.2
2.55 2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Package Dimensions
unit : mm
7042-001
10.2
4.5
1.3
123
1.2
0.8
2.55 2.55
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FA
Switching Time Test Circuit
VIN
10V
0V
PW=10µs VIN
D.C.1%
G
VDD=15V
ID=20A
RL=0.75
D VOUT
P.G 50
S 2SK3352
No.8125-2/4


Features Ordering number : ENN8125 2SK3352 N-Ch annel Silicon MOSFET 2SK3352 General-Pu rpose Switching Device Applications Fea tures • Low ON-resistance. • Ultrah igh-speed switching. • 4V drive. • DC / DC converter applications. Specif ications Absolute Maximum Ratings at Ta =25°C Parameter Drain-to-Source Volta ge Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable P ower Dissipation Channel Temperature St orage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteris tics at Ta=25°C Conditions PW≤10µs , duty cycle≤1% Tc=25˚C Parameter Symbol Conditions Drain-to-Source Bre akdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current Cutoff Voltage IGSS VG S(off) Forward Transfer Admittance Sta tic Drain-to-Source On-State Resistance yfs RDS(on)1 RDS(on)2 Input Ca pacitance Ciss Output Capacitance Co ss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time Turn-OFF Delay Time Fall Time Marking : K335.
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