K4012 2SK4012 Datasheet

K4012 Datasheet, PDF, Equivalent


Part Number

K4012

Description

2SK4012

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download K4012 Datasheet


K4012
2SK4012
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm
z Low drainsource ON-resistance
: RDS (ON) = 0.33 (typ.)
z High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
13
52
45
1170
13
4.5
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 11.8 mH, RG = 25 , IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2009-09-29

K4012
Electrical Characteristics (Ta = 25°C)
2SK4012
www.DataSheet4U.com
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turnon time
Fall time
Turnoff time
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
10 V
VGS
ID = 6.5 A VOUT
0V
ton
15 Ω
RL =
31 Ω
tf VDD ∼− 200 V
toff Duty 1%, tw = 10 μs
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 13 A
Qgd
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.33 0.4
4.0 8.5
— 2400 —
— 18 —
— 220 —
μA
V
μA
V
V
Ω
S
pF
— 25 —
— 70 —
ns
— 10 —
— 95 —
— 50 —
— 30 — nC
— 20 —
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V
dIDR / dt = 100 A / μs
Min Typ. Max Unit
— — 13 A
— — 52 A
— — 1.7 V
— 1000 —
ns
— 11 — μC
Marking
K4012
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29


Features 2SK4012 www.DataSheet4U.com TOSHIBA Fiel d Effect Transistor Silicon N-Channel M OS Type (π-MOSVI) 2SK4012 Switching R egulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON ) = 0.33 Ω (typ.) z High forward tra nsfer admittance : |Yfs| = 8.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings ( Ta = 25°C) Characteristic Symbol Ra ting Unit Drain−source voltage Dra in−gate voltage (RGS = 20 kΩ) Gate source voltage Drain current DC (No te 1) Pulse (Note 1) Drain power dissi pation (Tc = 25°C) Single-pulse avala nche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperatu re range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 500 500 ±30 13 52 45 1170 13 4.5 150 −55 to 150 V V V A A W mJ A mJ °C °C 1: Gate 2: Drain 3 : Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 (typ.) Note: Using .
Keywords K4012, datasheet, pdf, Toshiba Semiconductor, 2SK4012, 4012, 012, 12, K401, K40, K4, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)