RJK03M5DPA MOS FET Datasheet

RJK03M5DPA Datasheet, PDF, Equivalent


Part Number

RJK03M5DPA

Description

N Channel Power MOS FET

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download RJK03M5DPA Datasheet


RJK03M5DPA
RJK03M5DPA
30V, 30A, 6.5mmax.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
Preliminary Datasheet
R07DS0770EJ0200
Rev.2.00
Feb 12 2013
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
10.5
11
30
4.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0770EJ0200 Rev.2.00
Feb 12 2013
Page 1 of 6

RJK03M5DPA
RJK03M5DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
5.4
6.6
70
1350
220
120
1.4
10.4
4.0
3.1
3.7
3.0
21.7
7.0
0.87
8.8
Max
± 0.5
1
2.5
6.5
8.6
1890
2.8
1.13
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD 10 V
RL = 0.67
Rg = 4.7
IF = 30 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 500 A/ s
R07DS0770EJ0200 Rev.2.00
Feb 12 2013
Page 2 of 6


Features RJK03M5DPA 30V, 30A, 6.5mΩmax. N Chann el Power MOS FET High Speed Power Switc hing Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mountin g  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package c ode: PWSN0008DE-A (Package name: WPAK(3 F)) 5678 4321 4 G Preliminary Datash eet R07DS0770EJ0200 Rev.2.00 Feb 12 201 3 5 678 D DDD 1, 2, 3 Source 4 Gate 5 , 6, 7, 8 Drain S SS 1 23 Absolute Ma ximum Ratings Item Drain to source volt age Gate to source voltage Drain curren t Drain peak current Body-drain diode r everse drain current Avalanche current Avalanche energy Channel dissipation Ch annel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2 . Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID( pulse)Note1 IDR IAP Note 2 EAS Note 2 P ch Note3 ch-c Note3 Tch Tstg Rating s 30 ±20 30 120 30 10.5 11 30 4.2 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C.
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