IRF7805ZPbF Power MOSFET Datasheet

IRF7805ZPbF Datasheet, PDF, Equivalent


Part Number

IRF7805ZPbF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRF7805ZPbF Datasheet


IRF7805ZPbF
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% tested for Rg
PD - 96011A
IRF7805ZPbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:30V 6.8m @VGS = 10V 18nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
16
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 10
www.irf.com
1
06/30/05

IRF7805ZPbF
IRF7805ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.023 –––
––– 5.5 6.8
––– 7.0 8.7
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 16A
eVGS = 4.5V, ID = 13A
1.35 ––– 2.25 V VDS = VGS, ID = 250µA
––– - 4.7 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
64 ––– –––
––– 18 27
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 4.7 –––
VDS = 15V
––– 1.6 ––– nC VGS = 4.5V
––– 6.2 –––
ID = 12A
––– 5.5 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 7.8 –––
Qoss
Output Charge
––– 10 ––– nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 1.0 2.1
––– 11 –––
eVDD = 15V, VGS = 4.5V
––– 10 –––
ID = 12A
––– 14 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.7 –––
Ciss Input Capacitance
––– 2080 –––
VGS = 0V
Coss Output Capacitance
––– 480 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 220 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
72
12
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 120
A showing the
integral reverse
––– ––– 1.0
ep-n junction diode.
V TJ = 25°C, IS = 12A, VGS = 0V
e––– 29 44 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 20 30 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Features Applications l High Frequency Point-of-L oad Synchronous Buck Converter for Appl ications in Networking & Computing Syst ems. l Lead-Free Benefits l Very Low RD S(on) at 4.5V VGS l Ultra-Low Gate Impe dance l Fully Characterized Avalanche V oltage and Current l 100% tested for Rg PD - 96011A IRF7805ZPbF HEXFET® Pow er MOSFET VDSS RDS(on) max Qg (typ.) :30V 6.8m @VGS = 10V 18nC S1 S2 S3 G 4 AA 8D 7D 6D 5D Top View SO-8 Abso lute Maximum Ratings Parameter VDS Dra in-to-Source Voltage VGS ID @ TA = 25 C ID @ TA = 70°C IDM PD @TA = 25°C P D @TA = 70°C Gate-to-Source Voltage C ontinuous Drain Current, VGS @ 10V Cont inuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPowe r Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance P arameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Max. 30 ± 20 16 12 120 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W Notes  th.
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