IRF7805ZPbF

Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% tested for Rg PD - 96011A IRF7805ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) :30V 6.8m @VGS = 10V 18nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Max. 30 ± 20 16 12 120 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W Notes  through … are on page 10 www.irf.com 1 06/30/05 IRF7805ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.023 ––– ––– 5.5 6.8 ––– 7.0 8.7 V/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 16A eVGS...