2SK4080 EFFECT TRANSISTOR Datasheet

2SK4080 Datasheet, PDF, Equivalent


Part Number

2SK4080

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 7 Pages
Datasheet
Download 2SK4080 Datasheet


2SK4080
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4080
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
Low QGD: QGD = 6.3 nC TYP.
4.5 V drive available
<R>
ORDERING INFORMATION
PART NUMBER
2SK4080(1)-S27-AY Note
2SK4080-ZK-E1-AY Note
2SK4080-ZK-E2-AY Note
PACKAGE
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
VGSS ±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±48
±144
A
A
Total Power Dissipation (TC = 25°C) PT1 29 W
Total Power Dissipation
PT2 1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS 21 A
EAS
44.1
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18214EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006

2SK4080
2SK4080
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 24 A
RDS(on)2 VGS = 4.5 V, ID = 24 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V
Rise Time
tr ID = 30 A
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = 12 V
RG = 3 Ω
Total Gate Charge
QG1 VDD = 15 V, VGS = 12 V, ID = 30 A
QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A
Gate to Source Charge
QGS
VDD = 15 V
Gate to Drain Charge
QGD ID = 30 A
Gate Resistance
Body Diode Forward Voltage Note
RG
VF(S-D)
IF = 30 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
trr IF = 30 A, VGS = 0 V
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
1.5 2.0 2.5 V
7 14
S
7.0 9.0 mΩ
10.2 15 mΩ
1670
pF
290 pF
150 pF
10 ns
5.3 ns
42 ns
6.1 ns
32 nC
13 nC
4.6 nC
6.3 nC
2.4 Ω
0.94 1.5 V
29 ns
23 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18214EJ2V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 SK4080 SWITCHING N-CHANNEL POWER MOS FE T DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on- state resistance and excellent switchin g characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous re ctifier. FEATURES • Low on-state res istance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low QGD: QGD = 6.3 nC TYP. • 4.5 V drive available ORDERING INFORMATION PART NUMBER 2SK 4080(1)-S27-AY Note 2SK4080-ZK-E1-AY No te 2SK4080-ZK-E2-AY Note PACKAGE TO-25 1 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3 ZK) Note Pb-free (This product does no t contain Pb in external electrode.) A BSOLUTE MAXIMUM RATINGS (TA = 25°C) D rain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±48 ±144 A A Tota l Power Dissipation (TC = 25°C) PT1 29 W Total Power Dissipation PT2 1.0 .
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