RJK03M8DNS MOS FET Datasheet

RJK03M8DNS Datasheet, PDF, Equivalent


Part Number

RJK03M8DNS

Description

Silicon N Channel Power MOS FET

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download RJK03M8DNS Datasheet


RJK03M8DNS
RJK03M8DNS
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0774EJ0110
Rev.1.10
May 29, 2012
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.3 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4 321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
13
16.9
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0774EJ0110 Rev.1.10
May 29, 2012
Page 1 of 6

RJK03M8DNS
RJK03M8DNS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
4.3
5.1
70
1850
290
150
1.5
14.5
4.6
4.5
4.2
3.6
30
9.0
0.84
9.3
Max
± 0.5
1
2.5
5.2
6.7
2590
3.0
1.09
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 16 A
VGS = 10 V, ID = 15 A
VDD 10 V
RL = 0.66
Rg = 4.7
IF = 30 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 500 A/ s
R07DS0774EJ0110 Rev.1.10
May 29, 2012
Page 2 of 6


Features RJK03M8DNS Silicon N Channel Power MOS F ET Power Switching Preliminary Datashe et R07DS0774EJ0110 Rev.1.10 May 29, 201 2 Features  High speed switching Capable of 4.5 V gate drive  Low d rive current  High density mounting  Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package co de: PWSN0008JB-A (Package name: HWSON-8 ) 5 6 78 5 678 D DDD 4 321 4 G 1, 2 , 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 23 Absolute Maximum Ratings Item D rain to source voltage Gate to source v oltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Cha nnel dissipation Channel to case therma l impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25 C, Rg  50  3. Tc = 25C Symb ol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Not e3 Tch Tstg Ratings 30 ±20 30 120 30 13 16.9 20 6.25 150 –55 to +150 (Ta = 25°C) Unit V V A A.
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