RJK03M8DNS
Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0774EJ0110 Rev.1.10
May 29, 2012
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A (Packag...
