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RJK6024DP3-A0 Dataheets PDF



Part Number RJK6024DP3-A0
Manufacturers Renesas Technology
Logo Renesas Technology
Description High Speed Power Switching MOS FET
Datasheet RJK6024DP3-A0 DatasheetRJK6024DP3-A0 Datasheet (PDF)

RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel t.

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RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch Note2 θch-c Tch Tstg Preliminary Datasheet R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 600 ±30 0.4 0.6 0.4 0.6 1.04 120 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 1 of 6 RJK6024DP3-A0 Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3 — — — — — — — — — — — — — Notes: 4. Pulse test Typ — — — — 28 37.5 7.5 0.9 30 14.5 48 77 4.3 0.5 3.2 0.85 230 Preliminary Max — 1 ±0.1 5 42 Unit V μA μA V Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.2 A, VGS = 10 V Note4 — — — — — — — — — — 1.45 — pF VDS = 25 V pF VGS = 0 pF f = 1 MHz ns ID = 0.2 A ns VGS = 10 V ns RL = 1500 Ω ns Rg = 10 Ω nC VDD = 480 V nC VGS = 10 V nC ID = 0.4 A V IF = 0.4 A, VGS = 0 Note4 ns IF = 0.4 A, VGS = 0 diF/dt = 50 A/μs R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 2 of 6 RJK6024DP3-A0 Main Characteristics Drain Current ID (A) Typical Output Characteristics 0.6 Ta = 25°C Pulse Test 0.5 6V 8, 10 V 5.8 V 0.4 5.6 V 0.3 5.4 V 0.2 5.2 V 0.1 VGS = 5 V 0 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) 1000 VGS = 10 V Ta = 25°C Pulse Test 100 Drain to Source on State Resistance RDS(on) (Ω) 10 0.01 0.1 Drain Current ID (A) 1 1000 Body-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) Preliminary Typical Transfer Characteristics 1 VDS = 10 V Pulse Test Tc = −25°C 25°C 75°C 0.1 0.01 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) 80 VGS = 10 V Pulse Test 60 ID = 0.4 A 40 0.2 A 0.1 A 20 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Recovery Time trr (ns) 100 10 0.1 di / dt = 50 A / μs VGS = 0, Ta = 25°C 1 10 Reverse Drain Current IDR (A) R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 3 of 6 Reverse Drain Current IDR (A) Capacitance C (pF) RJK6024DP3-A0 Typical Capacitance vs. Drain to Source Voltage (Typical) 100 Ciss 10 Coss 1 Crss VGS = 0 f = 1 MHz Ta = 25°C 0.1 0 50 100 150 200 250 300 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 0.6 VGS = 0 V Ta = 25 °C 0.5 Pulse Test 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Voltage VDS (V) Preliminary Gate to Source Voltage VGS (V) Dynamic Input Characteristics (Typical) 800 VGS 600 VDS ID = 0.4 A 16 Ta = 25 °C VDD = 480 V 300 V 100 V 12 400 8 200 0 0 VDD = 480 V 300 V 100 V 24 68 Gate Charge Qg (nC) 4 0 10 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5.0 VDS = 10 V 4.5 4.0 3.5 ID = 10 mA 1 mA 3.0 0.1 mA 2.5 2.0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 4 of 6 RJK6024DP3-A0 3 Normalized Transient Thermal Impedance vs. Pulse Width Preliminary Normalized Transient Thermal Impedance γ s (t) D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 1shot pulse θch – a(t) = γs (t) • θch – a θch – a = 120°C/W, Ta = 25°C PDM D= PW T PW T 0.01 10 μ 100 μ 1m 10 m 100 m 1 Pulse Width PW (s) 10 100 1000 Switching Time Test Circuit Vin Monitor 10 Ω Vin 10 V D.U.T. Vout Monitor RL V DD = 300 V Waveform Vin Vout 10% 10% 90% td(on) tr 90% 10% 90% td(off) tf R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 5 of 6 RJK6024DP3-A0 Package Dimensions Package Name SOT-223 JEITA Package Code _ RENESAS Code PRSP0004ZB-A Previous Code SOT-223A MASS[Typ.] 0.12g 6.5 ± 0.2 3.0 +0.10 −0.05 Preliminary Unit: mm 1.66 ± 0.14 7.0 ± 0.3 3.5 ± 0.2 1.0 ± 0.1 0.7 ± 0.1 .


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