RJK6024DP3-A0 MOS FET Datasheet

RJK6024DP3-A0 Datasheet, PDF, Equivalent


Part Number

RJK6024DP3-A0

Description

High Speed Power Switching MOS FET

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download RJK6024DP3-A0 Datasheet


RJK6024DP3-A0
RJK6024DP3-A0
600 V - 0.4 A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
4
3
2
1
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1106EJ0100
Rev.1.00
Aug 23, 2013
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
±30
0.4
0.6
0.4
0.6
1.04
120
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS1106EJ0100 Rev.1.00
Aug 23, 2013
Page 1 of 6

RJK6024DP3-A0
RJK6024DP3-A0
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
600
3
Notes: 4. Pulse test
Typ
28
37.5
7.5
0.9
30
14.5
48
77
4.3
0.5
3.2
0.85
230
Preliminary
Max
1
±0.1
5
42
Unit
V
μA
μA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.2 A, VGS = 10 V Note4
1.45
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 0.2 A
ns VGS = 10 V
ns RL = 1500 Ω
ns Rg = 10 Ω
nC VDD = 480 V
nC VGS = 10 V
nC ID = 0.4 A
V IF = 0.4 A, VGS = 0 Note4
ns IF = 0.4 A, VGS = 0
diF/dt = 50 A/μs
R07DS1106EJ0100 Rev.1.00
Aug 23, 2013
Page 2 of 6


Features RJK6024DP3-A0 600 V - 0.4 A - MOS FET Hi gh Speed Power Switching Features • L ow on-resistance RDS(on) = 28 Ω typ. ( at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings It em Drain to source voltage Gate to sour ce voltage Drain current Drain peak cur rent Body-drain diode reverse drain cur rent Body-drain diode reverse drain pea k current Channel dissipation Channel t o case thermal impedance Channel temper ature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pul se) Pch Note2 θch-c Tch Tstg Prel iminary Datasheet R07DS1106EJ0100 Rev.1 .00 Aug 23, 2013 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 600 ±30 0. 4 0.6 0.4 0.6 1.04 120 150 –55 to +15 0 (Ta = 25°C) Unit V V A A A A W °C/ W °C °C R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 Page 1 of 6 RJK6024DP3-A0 Electric.
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