Document
RJK6024DP3-A0
600 V - 0.4 A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
• Low leakage current • High speed switching
Outline
RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223)
4
3 2 1
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
Pch Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1106EJ0100 Rev.1.00
Aug 23, 2013
D
1. Gate 2. Drain 3. Source 4. Drain
S
Ratings 600 ±30 0.4 0.6 0.4 0.6 1.04 120 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A W
°C/W °C °C
R07DS1106EJ0100 Rev.1.00 Aug 23, 2013
Page 1 of 6
RJK6024DP3-A0
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time
Symbol V(BR)DSS
IDSS IGSS VGS(off) RDS(on)
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd VDF trr
Min 600 — —
3 —
— — — — — — — — — — — —
Notes: 4. Pulse test
Typ — — — — 28
37.5 7.5 0.9 30 14.5 48 77 4.3 0.5 3.2 0.85 230
Preliminary
Max — 1 ±0.1 5 42
Unit V μA μA V Ω
(Ta = 25°C)
Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.2 A, VGS = 10 V Note4
— — — — — — — — — — 1.45 —
pF VDS = 25 V pF VGS = 0 pF f = 1 MHz
ns ID = 0.2 A ns VGS = 10 V ns RL = 1500 Ω ns Rg = 10 Ω
nC VDD = 480 V nC VGS = 10 V nC ID = 0.4 A V IF = 0.4 A, VGS = 0 Note4
ns IF = 0.4 A, VGS = 0 diF/dt = 50 A/μs
R07DS1106EJ0100 Rev.1.00 Aug 23, 2013
Page 2 of 6
RJK6024DP3-A0
Main Characteristics
Drain Current ID (A)
Typical Output Characteristics
0.6 Ta = 25°C
Pulse Test 0.5
6V 8, 10 V
5.8 V
0.4
5.6 V 0.3
5.4 V 0.2
5.2 V
0.1 VGS = 5 V
0 0 4 8 12 16 20 Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance vs. Drain Current (Typical)
1000
VGS = 10 V Ta = 25°C
Pulse Test
100
Drain to Source on State Resistance RDS(on) (Ω)
10 0.01
0.1 Drain Current ID (A)
1
1000
Body-Drain Diode Reverse Recovery Time (Typical)
Static Drain to Source on State Resistance RDS(on) (Ω)
Drain Current ID (A)
Preliminary
Typical Transfer Characteristics
1
VDS = 10 V Pulse Test
Tc = −25°C
25°C 75°C 0.1
0.01 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Temperature (Typical)
80 VGS = 10 V Pulse Test
60 ID = 0.4 A
40 0.2 A
0.1 A 20
0 -25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Recovery Time trr (ns)
100
10 0.1
di / dt = 50 A / μs VGS = 0, Ta = 25°C
1 10
Reverse Drain Current IDR (A)
R07DS1106EJ0100 Rev.1.00 Aug 23, 2013
Page 3 of 6
Reverse Drain Current IDR (A)
Capacitance C (pF)
RJK6024DP3-A0
Typical Capacitance vs. Drain to Source Voltage (Typical) 100
Ciss
10 Coss
1 Crss VGS = 0 f = 1 MHz Ta = 25°C
0.1 0 50 100 150 200 250 300 Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical) 0.6 VGS = 0 V Ta = 25 °C 0.5 Pulse Test 0.4
0.3
0.2
0.1
0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage VGS(off) (V)
Drain to Source Voltage VDS (V)
Preliminary
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics (Typical)
800 VGS
600 VDS
ID = 0.4 A 16 Ta = 25 °C
VDD = 480 V 300 V
100 V
12
400 8
200
0 0
VDD = 480 V 300 V 100 V
24 68
Gate Charge Qg (nC)
4
0 10
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5.0 VDS = 10 V
4.5
4.0
3.5 ID = 10 mA 1 mA
3.0 0.1 mA
2.5
2.0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C)
R07DS1106EJ0100 Rev.1.00 Aug 23, 2013
Page 4 of 6
RJK6024DP3-A0
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance γ s (t)
D=1 1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01 1shot
pulse
θch – a(t) = γs (t) • θch – a θch – a = 120°C/W, Ta = 25°C
PDM
D=
PW T
PW
T
0.01 10 μ
100 μ
1m
10 m 100 m
1
Pulse Width PW (s)
10 100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω Vin 10 V
D.U.T.
Vout Monitor
RL
V DD = 300 V
Waveform
Vin Vout
10% 10%
90%
td(on)
tr
90%
10%
90% td(off)
tf
R07DS1106EJ0100 Rev.1.00 Aug 23, 2013
Page 5 of 6
RJK6024DP3-A0
Package Dimensions
Package Name SOT-223
JEITA Package Code _
RENESAS Code PRSP0004ZB-A
Previous Code SOT-223A
MASS[Typ.] 0.12g
6.5 ± 0.2
3.0
+0.10 −0.05
Preliminary
Unit: mm 1.66 ± 0.14
7.0 ± 0.3
3.5 ± 0.2
1.0 ± 0.1
0.7 ± 0.1
.