2N4857A SILICON JFET Datasheet

2N4857A Datasheet, PDF, Equivalent


Part Number

2N4857A

Description

N-CHANNEL SILICON JFET

Manufacture

Central Semiconductor

Total Page 2 Pages
Datasheet
Download 2N4857A Datasheet


2N4857A
2N4857
2N4857A
N-CHANNEL
SILICON JFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4857 and
2N4857A are N-Channel silicon JFETs designed for
analog switching and chopper applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
SYMBOL
VDS
VDG
VGSR
IGF
PD
TJ, Tstg
40
40
40
50
360
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IGSS
VGS=20V, VDS=0
IGSS
VGS=20V, VDS=0, TA=150°C
IDSS
VDS=15V, VGS=0
20
ID(OFF)
VDS=15V, VGS=10V
ID(OFF)
VDS=15V, VGS=10V, TA=150°C
BVGSS
IG=1.0μA, VDS=0
40
VGS(OFF) VDS=15V, ID=0.5nA
2.0
VDS(ON)
ID=10mA, VGS=0
rDS(ON)
VGS=0, ID=0, f=1.0kHz
Crss
VGS=10V, VDS=0, f=1.0MHz (2N4857)
Crss
VGS=10V, VDS=0, f=1.0MHz (2N4857A)
Ciss VGS=10V, VDS=0, f=1.0MHz (2N4857)
Ciss VGS=10V, VDS=0, f=1.0MHz (2N4857A)
td VDD=10V, VGS(OFF)=6.0V, ID=10mA
tr VDD=10V, VGS(OFF)=6.0V, ID=10mA
toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857)
toff VDD=10V, VGS(OFF)=6.0V, ID=10mA (2N4857A)
MAX
0.25
0.5
100
0.25
0.5
6.0
0.5
40
8.0
3.5
18
10
6.0
4.0
50
40
UNITS
V
V
V
mA
mW
°C
UNITS
nA
μA
mA
nA
μA
V
V
V
Ω
pF
pF
pF
pF
ns
ns
ns
ns
R0 (11-June 2012)

2N4857A
2N4857
2N4857A
N-CHANNEL
SILICON JFET
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Source
2) Drain
3) Gate
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R0 (11-June 2012)


Features 2N4857 2N4857A N-CHANNEL SILICON JFET w w w. c e n t r a l s e m i . c o m DES CRIPTION: The CENTRAL SEMICONDUCTOR 2N4 857 and 2N4857A are N-Channel silicon J FETs designed for analog switching and chopper applications. MARKING: FULL PAR T NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-G ate Voltage Reverse Gate-Source Voltage Forward Gate Current Power Dissipation (TA=25°C) Operating and Storage Junct ion Temperature SYMBOL VDS VDG VGSR IG F PD TJ, Tstg 40 40 40 50 360 -65 to + 200 ELECTRICAL CHARACTERISTICS: (TA=25 °C unless otherwise noted) SYMBOL TES T CONDITIONS MIN IGSS VGS=20V, VDS=0 IGSS VGS=20V, VDS=0, TA=150°C IDSS VDS=15V, VGS=0 20 ID(OFF) VDS=15V, VGS=10V ID(OFF) VDS=15V, VGS=10V, TA =150°C BVGSS IG=1.0μA, VDS=0 40 V GS(OFF) VDS=15V, ID=0.5nA 2.0 VDS(ON) ID=10mA, VGS=0 rDS(ON) VGS=0, ID=0, f=1.0kHz Crss VGS=10V, VDS=0, f=1.0M Hz (2N4857) Crss VGS=10V, VDS=0, f=1. 0MHz (2N4857A) Ciss VGS=10V, VDS=0, f=1.0MHz (2N4857) Ciss VGS=10V,.
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