Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HLE NP22N055ILE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP22N055SLE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±22 ±55
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2
PT IAS EAS
45 14 / 5 19 / 25
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V V A A W W A mJ °C °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
3.33 125
°C/W °C/W
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confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14136EJ4V0DS00 (4th edition) Date Published July 2005 NS CP(K) Printed in Japan
The mark shows major revised points.
1999, 2005
NP22N055HLE, NP22N055ILE, NP22N055SLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time
IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on)
tr td(off)
VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 11 A VGS = 10 V, ID = 11 A VGS = 5.0 V, ID = 11 A VGS = 4.5 V, ID = 11 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 11 A VGS = 10 V RG = 1 Ω
Fall Time Total Gate Charge
Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge
Note Pulsed
tf QG1 QG2 QGS QGD VF(S-D) trr Qrr
VDD = 44 V, VGS = 10 V, ID = 22 A VDD = 44 V VGS = 5 V ID = 22 A IF = 22 A, VGS = 0 V IF = 22 A, VGS = 0 V di/dt = 100 A/µs
MIN.
1.5 5
TYP.
2.0 10 29 35 37 730 110 52 9.0 6.0 32 5.4 15 9 3 4.5 1.0 37 45
MAX. 10 ±10 2.5
37 45 51 1100 170 95 20 16 65 14 23 14
UN.