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NP22N055ILE Dataheets PDF



Part Number NP22N055ILE
Manufacturers Renesas
Logo Renesas
Description N-Channel Power MOSFET
Datasheet NP22N055ILE DatasheetNP22N055ILE Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUM.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HLE NP22N055ILE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SLE TO-252 (JEDEC) / MP-3ZK Note Not for new design. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±22 ±55 Total Power Dissipation (TA = 25°C) PT 1.2 Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 Single Avalanche Energy Note2 PT IAS EAS 45 14 / 5 19 / 25 Channel Temperature Tch 175 Storage Temperature Tstg –55 to +175 V V A A W W A mJ °C °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.) (TO-252) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 3.33 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14136EJ4V0DS00 (4th edition) Date Published July 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1999, 2005 NP22N055HLE, NP22N055ILE, NP22N055SLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 11 A VGS = 10 V, ID = 11 A VGS = 5.0 V, ID = 11 A VGS = 4.5 V, ID = 11 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 28 V, ID = 11 A VGS = 10 V RG = 1 Ω Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Note Pulsed tf QG1 QG2 QGS QGD VF(S-D) trr Qrr VDD = 44 V, VGS = 10 V, ID = 22 A VDD = 44 V VGS = 5 V ID = 22 A IF = 22 A, VGS = 0 V IF = 22 A, VGS = 0 V di/dt = 100 A/µs MIN. 1.5 5 TYP. 2.0 10 29 35 37 730 110 52 9.0 6.0 32 5.4 15 9 3 4.5 1.0 37 45 MAX. 10 ±10 2.5 37 45 51 1100 170 95 20 16 65 14 23 14 UN.


NP22N055HLE NP22N055ILE NP22N055SLE


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