MOS FET. RJK03M4DPA Datasheet


RJK03M4DPA FET. Datasheet pdf. Equivalent


RJK03M4DPA


N Channel Power MOS FET
RJK03M4DPA
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
Features
 High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))

5678 4321

4 G

Preliminary Datasheet
R07DS0768EJ0200 Rev.2.00
Feb 12, 2013

5 678 D DDD

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

S SS 1 23

Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50  3. Tc = 25C

Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg

Ratings 30 ±20 35 140 35 13 16.9 30 4.16 150
–55 to +150

(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C

R07DS0768EJ0200 Rev.2.00 Feb 12, 2013

Page 1 of 6

RJK03M4DPA
Electrical Characteristics

Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate ...



RJK03M4DPA
RJK03M4DPA
30V, 35A, 4.6mmax.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
Preliminary Datasheet
R07DS0768EJ0200
Rev.2.00
Feb 12, 2013
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
35
140
35
13
16.9
30
4.16
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0768EJ0200 Rev.2.00
Feb 12, 2013
Page 1 of 6

RJK03M4DPA
RJK03M4DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
3.8
4.7
80
1550
260
140
2.0
12
4.2
3.3
3.4
2.4
26
8.3
0.84
7.7
Max
± 0.5
1
2.5
4.6
6.1
2170
4.0
1.09
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 17.5 A, VGS = 10 V Note4
ID = 17.5 A, VGS = 4.5 V Note4
ID = 17.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 35 A
VGS = 10 V, ID = 17.5 A
VDD 10 V
RL = 0.57
Rg = 4.7
IF = 35 A, VGS = 0 Note4
IF =35 A, VGS = 0
diF/ dt = 500 A/ s
R07DS0768EJ0200 Rev.2.00
Feb 12, 2013
Page 2 of 6




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