UPA2736GR

Data Sheet μPA2736GR P-channel MOSFET –30 V, –14 A, 7.0 mΩ R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 Description The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = −30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V, ID = −14 A) 4.5 V Gate-drive available Small and surface mount package (Power SOP8) Pb-free and Halogen free Ordering Information Power SOP8 Part No. μ PA2736GR-E1-AT μ PA2736GR-E2-AT LEAD PLATING Pure Sn PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings −30 m20 m14 m140 1.1 2.5 150 −55 to +150 14 19.6 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 114 °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH R07DS0868EJ0100 Rev.1.00 Aug 28, 2012 Page 1 of 6 μPA2736GR Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Curr...