MOS FET. RJK03N8DNS Datasheet


RJK03N8DNS FET. Datasheet pdf. Equivalent


RJK03N8DNS


Silicon N Channel Power MOS FET
Preliminary Datasheet

RJK03N8DNS

Silicon N Channel Power MOS FET with Schottky Barrier Diode

Power Switching

R07DS0789EJ0100 Rev.1.00

Feb 29, 2012

Features
 High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance
RDS(on) = 4.6 m typ. (at VGS = 8.0 V)  Pb-free  Halogen-free

Outline

RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 78

5 678 D DDD

4 321

4 G

1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

S SS 1 23

Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50  3. Tc = 25C

Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg

Ratings 30 ±12 30 120 30 13 16.9 20 6.25 150
–55 to +150

(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C

R07DS0789EJ0100 Rev.1.00 Feb 29, 2012

Page 1 of 6

RJK03N8DNS
Electrical Characteristics

Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfe...



RJK03N8DNS
Preliminary Datasheet
RJK03N8DNS
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
R07DS0789EJ0100
Rev.1.00
Feb 29, 2012
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.6 mtyp. (at VGS = 8.0 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4 321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±12
30
120
30
13
16.9
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0789EJ0100 Rev.1.00
Feb 29, 2012
Page 1 of 6

RJK03N8DNS
RJK03N8DNS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
4.6
5.1
80
2950
340
220
1.5
23.6
7.1
5.8
6.0
4.0
51
14
0.47
7.8
Max
±0.5
1
2.5
5.5
6.4
4130
3.0
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 8 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 30 A
VGS = 8 V, ID = 15 A
VDD 10 V
RL = 0.67
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 500 A/ s
R07DS0789EJ0100 Rev.1.00
Feb 29, 2012
Page 2 of 6




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