Document
FML34S
®
FML34S
Pb
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current
Internal Configuration Base Backside
—
Anode Cathode Anode
GENERAL DESCRIPTION
FML34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR V RRM
I F(AV)
I F(RMS) I FSM PD TJ T STG Torque
Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink
TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine
Recommended(M3)
400 400 10 20 14 100
83 -40 to +150 -40 to +150
1.1
V V A A A A
W °C °C N·m
R θJC
Thermal Resistance
Junction-to-Case
1.5 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V VR=400V, TJ=125°C
-- -- 15 µA -- -- 250 µA
VF Forward Voltage
I F =10A IF=10A, TJ=125°C
-- 1.00 --- 0.87 --
V V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 20 --
ns
trr Reverse Recovery Time
VR=200V, IF=10A
-- 25 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.2 --
A
trr Reverse Recovery Time
VR=200V, IF=10A
-- 46 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 5.5 --
A
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3 http://www.thinkisemi.com/
IF (A)
IRRM (A)
FML34S
®
20
16 TJ =125°C
12
8
TJ =25°C
4
0 0 0.25 0.50 0.75 1.00 1.25 1.50
VF(V) Fig1. Forward Voltage Drop vs Forward Current
25
VR=200V TJ =125°C
20
IF=20A
15
10
5
IF=10A IF=5A
0 0 200 400 600 800 1000
diF/dt(A/μs) Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
0.6
trr
0.4 IRRM
0.2 Qrr
0 0 25 50 75 100 125 150 TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
ZthJC (K/W)
Qrr (nc)
trr (ns)
70
VR=200V
60 TJ =125°C
IF=20A
50
40
30
IF=10A
20 IF=5A
10
0 0 200 400 600 800 1000 diF/dt(A/μs) Fig2. Reverse Recovery Time vs diF/dt
250
VR=200V TJ =125°C
200
IF=20A
150 IF=10A
IF=5A
100
50
0 0 200 400 600 800 1000 diF/dt(A/μs) Fig4. Reverse Recovery Charge vs diF/dt
10
1 10-1 10-2
Duty 0.5 0.2 0.1 0.05 Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Kf
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3 http://www.thinkisemi.com/
FML34S
®
IF trr
dIF/dt
Qrr IRRM
0.9 IRRM
0.25 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters Fig8. Package Outline
Rev.05 © 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3 http://www.thinkisemi.com/
.