Epitaxial Diode. FML34S Datasheet


FML34S Diode. Datasheet pdf. Equivalent


FML34S


400 Volt Common Cathode Fast Recovery Epitaxial Diode
FML34S

®

FML34S

Pb

Pb Free Plating Product

20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode

APPLICATION
· Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS

TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)

PRODUCT FEATURE
· Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current

Internal Configuration Base Backside
—

Anode Cathode Anode

GENERAL DESCRIPTION

FML34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

ABSOLUTE MAXIMUM RATINGS

TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

VR V RRM
I F(AV)
I F(RMS) I FSM PD TJ T STG Torque

Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current Non-Repetitive Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink

TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine
Recommended(M3)

400 400 10 20 14 100
83 -40 to +150 -40 to +150
1.1

V V A A A A
W °C °C N·m

R θJC

Thermal Resistance

Junction-to-Case

1.5 °C /W

Weight

6g

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

Symbol...



FML34S
FML34S
®
FML34S
Pb
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
FML34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
400
400
10
20
14
100
83
-40 to +150
-40 to +150
1.1
V
V
A
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.5 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V
VR=400V, TJ=125°C
-- -- 15 µA
-- -- 250 µA
VF Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 1.00 --
-- 0.87 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 20 --
ns
trr Reverse Recovery Time
VR=200V, IF=10A
-- 25 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.2 --
A
trr Reverse Recovery Time
VR=200V, IF=10A
-- 46 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 5.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/

FML34S
FML34S
®
20
16 TJ =125°C
12
8
TJ =25°C
4
0
0 0.25 0.50 0.75 1.00 1.25 1.50
VFV
Fig1. Forward Voltage Drop vs Forward Current
25
VR=200V
TJ =125°C
20
IF=20A
15
10
5
IF=10A
IF=5A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
0.6
trr
0.4 IRRM
0.2 Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
70
VR=200V
60 TJ =125°C
IF=20A
50
40
30
IF=10A
20 IF=5A
10
0
0 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
250
VR=200V
TJ =125°C
200
IF=20A
150 IF=10A
IF=5A
100
50
0
0 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/




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