Purpose Transistors. L2SC1623QLT1 Datasheet


L2SC1623QLT1 Transistors. Datasheet pdf. Equivalent


L2SC1623QLT1


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

FEATURE
ƽHigh Voltage: VCEO = 50 V.
ƽEpitaxial planar type.
ƽPNP complement: L2SA812 www.DataSheet4U.coƽmPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L2SC1623QLT1 L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G

L5
L5 (Pb-Free)
L6
L6 (Pb-Free)
L7
L7 (Pb-Free)

3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

VCEO 50 V VCBO 60 V VEBO 7 V

Collector current-continuoun

IC

THERMAL CHARATEERISTICS

150 mAdc

Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Symbol PD
R θJA PD
R θJA Tj ,Tstg

Max
225 1.8 556
300 2.4 417 -55 to +150

Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC

L2SC1623*LT1
3
1 2
SOT– 23

1
BASE

3
COLLECTOR
2
EMITTER

L2SC1623-1/5

LESHAN RADIO COMPANY, LTD.

L2SC1623*LT1

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

Characteristic

Symbol Min Typ

OFF CHARACTERISTICS Collector Cutoff Current (VCB=60V) www.DataSheetE4mU.icttoemr Cutoff Current (VBE=5V)

I ...



L2SC1623QLT1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = 50 V.
ƽEpitaxial planar type.
ƽPNP complement: L2SA812
www.DataSheet4U.coƽmPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC1623QLT1
L2SC1623QLT1G
L2SC1623RLT1
L2SC1623RLT1G
L2SC1623SLT1
L2SC1623SLT1G
L5
L5
(Pb-Free)
L6
L6
(Pb-Free)
L7
L7
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO 50 V
VCBO 60 V
VEBO 7 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
150 mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SC1623*LT1
3
1
2
SOT– 23
1
BASE
3
COLLECTOR
2
EMITTER
L2SC1623-1/5

L2SC1623QLT1
LESHAN RADIO COMPANY, LTD.
L2SC1623*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector Cutoff Current (VCB=60V)
www.DataSheetE4mU.icttoemr Cutoff Current (VBE=5V)
I CBO
I EBO
--
ON CHARACTERISTICS
DC Current Gain
(IC=1.0mA, VCE=6V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base -Emitter On Voltage
IC=1mA,VCE=6.0V)
hFE
V CE(sat)
VBE(sat)
V BE
120
-
-
0.55
-
0.15
0.86
0.62
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=6.0V,IE =1.0MHz)
Output Capacitance(VCE = 6V, IE=0, f=1.0MHz)
Ft - 250
Cob - 3
hFE Values are classified as followes
NOTE:
*
hFE
Q
120~270
RS
180~390 270~560
Max
0.1
0.1
560
0.3
1.0
0.65
-
-
Unit
µA
µA
V
V
V
MHz
pF
L2SC1623-2/5




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