LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compa...
LESHAN RADIO COMPANY, LTD.
Low Frequency
Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compact package. IC = í0.8A.
www.DataSheet4U.com ƽEpitaxial planar type. ƽ
NPN complement: L2SD1781K ƽPb-Free Package is available.
3
1 2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G
AHQ
AHQ (Pb-Free)
AHR
AHR (Pb-Free)
3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits −40 −32 −5 −0.8 0.2 150 −55 to 150
Unit V V V A W °C °C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 120
Transition frequency
fT −
Output capacitance
Cob −
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
− 390 −
200 − MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −0.5A/ −50mA VCE= −3V, IC= −100mA VCE...