Purpose Transistors. L2SA812QLT1G Datasheet


L2SA812QLT1G Transistors. Datasheet pdf. Equivalent


L2SA812QLT1G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available.

www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L2SA812QLT1

M8

3000/Tape&Reel

L2SA812QLT1G L2SA812RLT1

M8 (Pb-Free)
M6

3000/Tape&Reel 3000/Tape&Reel

L2SA812RLT1G L2SA812SLT1

M6 (Pb-Free)
M7

3000/Tape&Reel 3000/Tape&Reel

L2SA812SLT1G

M7 (Pb-Free)

MAXIMUM RATINGS

3000/Tape&Reel

Rating

Symbol

L2SA812

Unit

Collector-Emitter Voltage

VCEO -50 V

Collector-Base Voltage

VCBO -60 V

Emitter-Base Voltage

VEBO -6 V

Collector current-continuoun

IC

THERMAL CHARATEERISTICS

-150

mAdc

Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC
Thermal Resistance, Junction to Ambient

Symbol PD
R θJA

Max
200 1.8 556

Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient
Junction and Storage Temperature

PD
R θJA Tj ,Tstg

200 2.4 417 -55 to +150

L2SA812*LT1
3 1
2 SOT-23

1 BASE

3 COLLECTOR
2 EMITTER

Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC

L2SA812-1/5

LESHAN RADIO COMPANY, LTD.

L2SA812*LT1

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

Characteristic

Symbol Min Typ Max

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown V...



L2SA812QLT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
ƽPb-Free Package is available.
www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G
L2SA812RLT1
M8
(Pb-Free)
M6
3000/Tape&Reel
3000/Tape&Reel
L2SA812RLT1G
L2SA812SLT1
M6
(Pb-Free)
M7
3000/Tape&Reel
3000/Tape&Reel
L2SA812SLT1G
M7
(Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
VCEO -50 V
Collector-Base Voltage
VCBO -60 V
Emitter-Base Voltage
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
Max
200
1.8
556
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
R θJA
Tj ,Tstg
200
2.4
417
-55 to +150
L2SA812*LT1
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SA812-1/5

L2SA812QLT1G
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
www.DataSheet4U.com
(IE=-50 µΑ )
Collector-Base Breakdown Voltage
(IC=-50 µA)
Collector Cutoff Current
(VCB=-50V)
Emitter Cutoff Current (VBE=-6V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
-50
-6
-60
ICBO
IEBO
-
--
--
--
- -0.1
-0.1
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA,VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-10mA)
Base -Emitter On Voltage
IE=-1.0mA,VCE=-6.0V)
hFE
VCE(sat)
VBE
120
-
-0.58
-
-0.18
-0.62
560
-0.3
-0.68
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=-6.0V,IE =-10mA)
Ft - 180
Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo
-
4.5
-
-
hFE Values are classified as followes
NOTE:
*
h
FE
Q
120~270
R
180~390
S
270~560
Unit
V
V
V
µA
µA
V
V
MHz
pF
L2SA812-2/5




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