LMBTA56WT3G Driver Transistors Datasheet

LMBTA56WT3G Datasheet, PDF, Equivalent


Part Number

LMBTA56WT3G

Description

Driver Transistors

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LMBTA56WT3G Datasheet


LMBTA56WT3G
LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBTA55WT1G
LMBTA56WT1G
S-LMBTA55WT1G
S-LMBTA56WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
LMBTA55 LMBTA56
–60 –80
–60 –80
–4.0
–500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
150 mW
1.2 mW/°C
833 °C/W
200 mW
1.6
625
–55 to +150
mW/°C
°C/W
°C
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
(S-)LMBTA55WT1G = 2H; (S-)LMBTA56 WT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
LMBTA55
LMBTA56
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
LMBTA55
( V CB = –80Vdc, I E= 0)
LMBTA56
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V (BR)CEO
V (BR)EBO
I CES
I CBO
Min
–60
–80
–4.0
Max Unit
–0.1
–0.1
–0.1
Vdc
Vdc
µAdc
µAdc
Rev.O 1/3

LMBTA56WT3G
LESHAN RADIO COMPANY, LTD.
LMBTA55WT1G LMBTA56WT1G
S-LMBTA55WT1G S-LMBTA56WT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –100mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V CE = –1.0Vdc)
hFE
VCE(sat)
V BE(on)
100
100
Max
–0.25
–1.2
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
fT
50 —
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
(S-)LMBTA55WT1G
(S-)LMBTA56WT1G
(S-)LMBTA55WT3G
(S-)LMBTA56WT3G
2H
2GM
2H
2GM
Shipping
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Unit
Vdc
Vdc
MHz
TURN−ON TIME
−1.0 V
VCC
+40 V
TURN−OFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
Rev.O 2/3


Features LESHAN RADIO COMPANY, LTD. Driver Trans istors PNP Silicon We declare that the material of product compliance with RoH S requirements. S- Prefix for Automotiv e and Other Applications Requiring Uniq ue Site and Control Change Requirements ; AEC-Q101 Qualified and PPAP Capable. LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collecto r Current — Continuous I C Value LMB TA55 LMBTA56 –60 –80 –60 –80 4.0 –500 Unit Vdc Vdc Vdc mAdc THE RMAL CHARACTERISTICS Characteristic Tot al Device Dissipation FR– 5 Board, (1 ) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, ( 2) TA = 25°C Derate above 25°C Therma l Resistance, Junction to Ambient Junct ion and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 150 mW 1.2 mW/°C 833 °C/W 200 mW 1.6 625 –55 to +150 mW/°C °C/W °C 3 1 2 SC-70 1 BASE.
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