LBC817-16WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC817-16WT1G S-LBC817-16 W T1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 5.0 500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW R θJA PD 1.2 mW/°C 833 °C/W 200 mW R θJA T J , Tstg 1.6 625 –55to+150 mW/°C °C/W °C DEVICE MARKING LBC817–16W T1G = 6A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter–Base Breakdown Voltage (I E = 1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.0 — — Typ — — — — — 3 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER Max Unit —V —V...