LBC817-16WT1G Purpose Transistors Datasheet

LBC817-16WT1G Datasheet, PDF, Equivalent


Part Number

LBC817-16WT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LBC817-16WT1G Datasheet


LBC817-16WT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-16WT1G
S-LBC817-16 W T1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
Unit
mW
R θJA
PD
1.2 mW/°C
833 °C/W
200 mW
R θJA
T J , Tstg
1.6
625
–55to+150
mW/°C
°C/W
°C
DEVICE MARKING
LBC817–16W T1G = 6A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
50
5.0
Typ
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—V
—V
—V
100 nA
5.0 µA
Rev.O 1/3

LBC817-16WT1G
LESHAN RADIO COMPANY, LTD.
LBC817-16WT1G
S-LBC817-16WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C= 100 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
h FE
V CE(sat)
V BE(on)
100
Typ Max Unit
— 250
— 0.7 V
— 1.2 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
(V CB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
Marking
LBC817-16WT1G
LBC817-16WT3G
6A
6A
Shipping
3000/Tape&Reel
10000/Tape&Reel
fT
C obo
100 — — MHz
— 10 — pF
Rev.O 2/3


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors • We declare that the material of product compliance with Ro HS requirements. • S- Prefix for Auto motive and Other Applications Requiring Unique Site and Control Change Require ments; AEC-Q101 Qualified and PPAP Capa ble. LBC817-16WT1G S-LBC817-16 W T1G MAXIMUM RATINGS Rating Symbol Collec tor–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Conti nuous I C Value 45 50 5.0 500 Unit V V V mAdc THERMAL CHARACTERISTICS Char acteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 2 5°C Thermal Resistance, Junction to Am bient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperatur e Symbol PD Max 150 Unit mW R θJA PD 1.2 mW/°C 833 °C/W 200 mW R θJA T J , Tstg 1.6 625 –55to+150 mW/° C °C/W °C DEVICE MARKING LBC817–16W T1G = 6A ELECTRICAL CHARACTERISTICS (TA = 25°C .
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