LBC807-25WT1G Purpose Transistors Datasheet

LBC807-25WT1G Datasheet, PDF, Equivalent


Part Number

LBC807-25WT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 3 Pages
Datasheet
Download LBC807-25WT1G Datasheet


LBC807-25WT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-25WT1G
S-LBC807-25WT1G
LBC807-25WT3G
S-LBC807-25WT3G
Marking
5B
5B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
LBC807-25WT1G
S-LBC807-25WT1G
3
1
2
SOT–323
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , Tstg
Max
150
1.2
833
200
1.6
625
–55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Rev.O 1/3

LBC807-25WT1G
LESHAN RADIO COMPANY, LTD.
LBC807-25WT1G
S-LBC807-25WT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
Collector Cutoff Current
(V CB = –20 V)
(V CB = –20 V, TJ = 150°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
I CBO
–45
–50
–5.0
Typ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ
ON CHARACTERISTICS
DC Current Gain
(IC= –100 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage
(IC = –500 mA, V CE= –1.0 V)
h FE
V CE(sat)
V BE(on)
160 —
——
——
Max
–100
–5.0
Max
400
–0.7
–1.2
Unit
V
V
V
nA
µA
Unit
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
fT
C obo
100 — — MHz
— 10 — pF
Rev.O 2/3


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors PNP Silicon FEATURE ƽC ollector current capability IC = -500 m A. ƽCollector-emitter voltage VCEO(max ) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LB C807 Series. ƽWe declare that the mate rial of product compliance with RoHS re quirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. D EVICE MARKING AND ORDERING INFORMATION Device LBC807-25WT1G S-LBC807-25WT1G L BC807-25WT3G S-LBC807-25WT3G Marking 5 B 5B Shipping 3000/Tape&Reel 10000/Tap e&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO C ollector–Base Voltage V CBO Emitter –Base Voltage V EBO Collector Curre nt — Continuous I C Value –45 –5 0 –5.0 –500 Unit V V V mAdc LBC80 7-25WT1G S-LBC807-25WT1G 3 1 2 SOT–3 23 1 BASE 3 COLLECTOR 2 EMITTER THER MAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C .
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