Amplifier Transistor. L2SC3356WT1G Datasheet


L2SC3356WT1G Transistor. Datasheet pdf. Equivalent


L2SC3356WT1G


High-Frequency Amplifier Transistor
DATA SHEET
LESHAN RADIO COMPANY, LTD.

DESCRIPTION
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

L2SC3356WT1G S-L2SC3356WT1G
3

ORDERING INFORMATION

Device
L2SC3356WT1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC3356WT3G

Marking 24 24

Shipping 3000/Tape & Reel 10000/Tape & Reel

1 2
SC-70

FEATURES • We declare that the material of product compliance with RoHS requirements.

• Low Noise and High Gain

NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

• High Power Gain

MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Collector to Base Voltage

VCBO

20 V

Collector to Emitter Voltage VCEO

12 V

Emitter to Base Voltage

VEBO

3.0 V

Collector Current

IC 100 mA

Total Power Dissipation

PT

150 mW

Junction Temperature

Tj

150 C

Storage Temperature

Tstg 65 to +150 C

ELECTRICAL CHARACTERISTICS (TA = 25 C)

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0 A VCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0 A VEB = 1.0 V, IC = 0

DC Current Gain

hFE 82 170 270

VCE = 3 V, IC = 10 mA

Gain Bandwidth Pro...



L2SC3356WT1G
DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC3356WT1G
S-L2SC3356WT1G
3
ORDERING INFORMATION
Device
L2SC3356WT1G
S-L2SC3356WT1G
L2SC3356WT3G
S-L2SC3356WT3G
Marking
24
24
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SC-70
FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20 V
Collector to Emitter Voltage VCEO
12 V
Emitter to Base Voltage
VEBO
3.0 V
Collector Current
IC 100 mA
Total Power Dissipation
PT
150 mW
Junction Temperature
Tj
150 C
Storage Temperature
Tstg 65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE 82 170 270
VCE = 3 V, IC = 10 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55 1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350 s, Duty Cycle  2 %
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Rev.O 1/4

L2SC3356WT1G
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0 50 100 150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
IC-Collector Current-mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC-Collector Current-mA
LESHAN RADIO COMPANY, LTD.
L2SC3356WT1G ;S-L2SC3356WT1G
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
VCE = 10 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
|S21e|2
10
VCE = 10 V
IC = 20 mA
0
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
Rev.O 2/4




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