L2SC3356WT3G Amplifier Transistor Datasheet

L2SC3356WT3G Datasheet, PDF, Equivalent


Part Number

L2SC3356WT3G

Description

High-Frequency Amplifier Transistor

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download L2SC3356WT3G Datasheet


L2SC3356WT3G
DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC3356WT1G
S-L2SC3356WT1G
3
ORDERING INFORMATION
Device
L2SC3356WT1G
S-L2SC3356WT1G
L2SC3356WT3G
S-L2SC3356WT3G
Marking
24
24
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SC-70
FEATURES
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20 V
Collector to Emitter Voltage VCEO
12 V
Emitter to Base Voltage
VEBO
3.0 V
Collector Current
IC 100 mA
Total Power Dissipation
PT
150 mW
Junction Temperature
Tj
150 C
Storage Temperature
Tstg 65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE 82 170 270
VCE = 3 V, IC = 10 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55 1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350 s, Duty Cycle  2 %
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Rev.O 1/4

L2SC3356WT3G
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0 50 100 150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
IC-Collector Current-mA
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC-Collector Current-mA
LESHAN RADIO COMPANY, LTD.
L2SC3356WT1G ;S-L2SC3356WT1G
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
VCE = 10 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
|S21e|2
10
VCE = 10 V
IC = 20 mA
0
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
Rev.O 2/4


Features DATA SHEET LESHAN RADIO COMPANY, LTD. D ESCRIPTION The L2SC3356WT1is an NPN sil icon epitaxial transistor designed for low noise amplifier at VHF, UHF and CAT V band. It has dynamic range and good c urrent characteristic. S- Prefix for Au tomotive and Other Applications Requiri ng Unique Site and Control Change Requi rements; AEC-Q101 Qualified and PPAP Ca pable. L2SC3356WT1G S-L2SC3356WT1G 3 ORDERING INFORMATION Device L2SC3356WT 1G S-L2SC3356WT1G L2SC3356WT3G S-L2SC33 56WT3G Marking 24 24 Shipping 3000/Ta pe & Reel 10000/Tape & Reel 1 2 SC-70 FEATURES • We declare that the mater ial of product compliance with RoHS req uirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VC E = 10 V, IC = 7 mA, f = 1.0 GHz • H igh Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUT E MAXIMUM RATINGS (TA = 25 C) Collect or to Base Voltage VCBO 20 V Collect or to Emitter Voltage VCEO 12 V Emitt er to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total .
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