LMBT918LT3G

VHF / UFH Transistor NPN Silicon LESHAN RADIO COMPANY, LTD. z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBT918LT1G S-LMBT918LT1G Device LMBT918LT1G S-LMBT918LT1G LMBT918LT3G S-LMBT918LT3G Marking M3B M3B Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD RθJA TJ , Tstg 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT9181LT1G = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 1.0 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) V (BR)CEO V (BR)CBO V (BR)EBO I CBO 15 30 3.0 — 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ...