L9015QLT3G Purpose Transistors Datasheet

L9015QLT3G Datasheet, PDF, Equivalent


Part Number

L9015QLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download L9015QLT3G Datasheet


L9015QLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9015QLT1G
Series
S-L9015QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G
S-L9015QLT1G
L9015QLT3G
S-L9015QLT3G
L9015RLT1G
S-L9015RLT1G
L9015RLT3G
S-L9015RLT3G
L9015SLT1G
S-L9015SLT1G
L9015SLT3G
S-L9015SLT3G
Marking
15Q
15Q
15R
15R
15S
15S
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
-45
-50
-5
-100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.(1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
RJA
PD
RJA
TJ ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4

L9015QLT3G
LESHAN RADIO COMPANY, LTD.
L9015QLT1G Series
S-L9015QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µA)
Collector-Base Breakdown Voltage
(IC=-100µA)
Collector Cutoff Current (VCB=-40V)
Emitter Cutoff Current (VEB=-3V)
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA, VCE=-5V)
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-5mA)
Symbol
V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO
I EBO
Min
-45
-5
-50
-
Typ
-
-
-
-
H FE
V CE
150
-
-
-
NOTE:
*
QR
S
HFE 150~300 200~400 300~600
Max
-
-
-
-100
-100
600
-0.3
Unit
V
V
V
nA
nA
V
Rev.O 2/4


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors PNP Silicon FEATURE ƽC omplementary to L9014. ƽ We declare th at the material of product compliance w ith RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requ iring Unique Site and Control Change Re quirements; AEC-Q101 Qualified and PPAP Capable. L9015QLT1G Series S-L9015QLT 1G Series DEVICE MARKING AND ORDERING INFORMATION Device L9015QLT1G S-L9015Q LT1G L9015QLT3G S-L9015QLT3G L9015RLT1G S-L9015RLT1G L9015RLT3G S-L9015RLT3G L 9015SLT1G S-L9015SLT1G L9015SLT3G S-L90 15SLT3G Marking 15Q 15Q 15R 15R 15S 15 S Shipping 3000/Tape&Reel 10000/Tape&R eel 3000/Tape&Reel 10000/Tape&Reel 3000 /Tape&Reel 10000/Tape&Reel MAXIMUM RAT INGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vol tage Collector current-continuoun Symb ol VCEO VCBO VEBO IC Value -45 -50 -5 -100 Unit V V V mA THERMAL CHARATEERI STICS Characteristic Total Device Diss ipation FR-5 Board.(1) TA=25oC Derate above 25oC Thermal Resistanc.
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