LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014. ƽ We declare that t...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9015QLT1G
Series S-L9015QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G S-L9015QLT1G
L9015QLT3G S-L9015QLT3G
L9015RLT1G S-L9015RLT1G
L9015RLT3G S-L9015RLT3G
L9015SLT1G S-L9015SLT1G
L9015SLT3G S-L9015SLT3G
Marking 15Q
15Q 15R
15R 15S
15S
Shipping 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun
Symbol VCEO VCBO VEBO IC
Value -45 -50 -5 -100
Unit V V V mA
THERMAL CHARATEERISTICS
Characteristic Total Device Dissipation FR-5 Board.(1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient
Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol PD
RJA PD
RJA TJ ,Tstg
Max
225 1.8 556
300 2.4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
3 1
2
SOT– 23
COLLECTOR 3
1 BASE
2 EMITTER
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L9015QLT1G Series S-L9015QLT1G Series
ELECTRICAL CH...