L2SC1623SLT3G Purpose Transistors Datasheet

L2SC1623SLT3G Datasheet, PDF, Equivalent


Part Number

L2SC1623SLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download L2SC1623SLT3G Datasheet


L2SC1623SLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
Pb-Free package is available
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC1623QLT1G
S-L2SC1623QLT1G
L2SC1623QLT3G
S-L2SC1623QLT3G
L2SC1623RLT1G
S-L2SC1623RLT1G
L2SC1623RLT3G
S-L2SC1623RLT3G
L2SC1623SLT1G
S-L2SC1623SLT1G
L5
L5
L6
L6
L7
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
L2SC1623SLT3G
S-L2SC1623SLT3G
L7
10000/Tape&Reel
L2SC1623QLT1G
Series
S-L2SC1623QLT1G
Series
3
1
2
SOT– 23
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
50
60
7
150
Unit
V
V
V
mAdc
Symbol
PD
R θJA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
1
BASE
DEVICE MARKING
L2SC1623QLT1G=L5 L2SC1623RLT1G=L6 L2SC1623SLT1G=L7
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector Cutoff Current (VCB=60V)
Emitter Cutoff Current (VBE=5V)
I CBO
I EBO
--
2
EMITTER
Max
0.1
0.1
Unit
µA
µA
Rev.O 1/5

L2SC1623SLT3G
LESHAN RADIO COMPANY, LTD.
L2SC1623QLT1G
Series
S-L2SC1623QLT1G
Series
ON CHARACTERISTICS
DC Current Gain
(IC=1.0mA, VCE=6V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base-Emitter Saturation Voltage
(IC=100mA,IB=10mA)
Base -Emitter On Voltage
IC=1mA,VCE=6.0V)
hFE
V CE(sat)
VBE(sat)
V BE
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=6.0V,IE =-10mA)
Output Capacitance(VCE = 6V, IE=0, f=1.0MHz)
Ft
Cob
hFE Values are classified as followes
NOTE:
*
Q
hFE 120~270
R
180~390
S
270~560
120
-
-
0.55
-
-
-
0.15
0.86
0.62
560
0.3
1.0
0.65
V
V
V
250 -
3-
MHz
Pf
Rev.O 2/5


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors Pb-Free package is avai lable S- Prefix for Automotive and Othe r Applications Requiring Unique Site an d Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MA RKING AND ORDERING INFORMATION Device Marking Shipping L2SC1623QLT1G S-L2S C1623QLT1G L2SC1623QLT3G S-L2SC1623QLT3 G L2SC1623RLT1G S-L2SC1623RLT1G L2SC162 3RLT3G S-L2SC1623RLT3G L2SC1623SLT1G S- L2SC1623SLT1G L5 L5 L6 L6 L7 3000/Tap e&Reel 10000/Tape&Reel 3000/Tape&Reel 1 0000/Tape&Reel 3000/Tape&Reel L2SC1623 SLT3G S-L2SC1623SLT3G L7 10000/Tape&R eel L2SC1623QLT1G Series S-L2SC1623QLT 1G Series 3 1 2 SOT– 23 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collec tor-Emitter Voltage VCEO Collector-Ba se Voltage VCBO Emitter-Base Voltage VEBO Collector current-continuoun IC THERMAL CHARATEERISTICS Characterist ic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumin.
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