LMBT6520LT1G Voltage Transistor Datasheet

LMBT6520LT1G Datasheet, PDF, Equivalent


Part Number

LMBT6520LT1G

Description

High Voltage Transistor

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download LMBT6520LT1G Datasheet


LMBT6520LT1G
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LMBT6520LT1G
S-LMBT6520LT1G
LMBT6520LT3G
S-LMBT6520LT3G
MAXIMUM RATINGS
Marking
2Z
2Z
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Base Current
IB
Collector Current — Continuous I C
Value
–350
–350
–5.0
–250
–500
Unit
Vdc
Vdc
Vdc
mA
mAdc
LMBT6520LT1G
S-LMBT6520LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
(S-)LMBT6520LT1G = 2Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = –1.0 mA )
Collector–Base Breakdown Voltage(I E = –100 µA )
Emitter–Base Breakdown Voltage(I E = –10 µA)
Collector Cutoff Current( V CB = –250V )
Emitter Cutoff Current( V EB = –4.0V )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
Min
–350
–350
–5.0
Max Unit
— Vdc
— Vdc
— Vdc
–50 nA
–50 nA
Rev.O 1/6

LMBT6520LT1G
LESHAN RADIO COMPANY, LTD.
LMBT6520LT1G , S-LMBT6520LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –1.0 mAdc, V CE = –10 Vdc)
(I C = –10mAdc, V CE = –10 Vdc)
(I C = –30 mAdc, V CE = –10 Vdc)
(I C = –50 mAdc, V CE = –10 Vdc)
(I C = –100 mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10mAdc, I B = –1.0mAdc)
(I C = –20 mAdc, I B = –2.0 mAdc)
(I C = –30 mAdc, I B = –3.0mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Base – Emitter Saturation Voltage
(I C = –10mAdc, I B = –1.0mAdc,)
(I C = –20mAdc, I B = –2.0mAdc,)
(I C = –30mAdc, I B = –3.0mAdc,)
Base–Emitter On Voltage
(I C = –100mAdc, V CE = –10V )
hFE
VCE(sat)
VBE(sat)
V BE(on)
20
30
30
20
15
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = –20 V, I C = –10mA, f = 20 MHz)
Collector –Base Capacitance
(V CB = –20 V, f = 1.0 MHz)
Emitter –Base Capacitance
(V EB= –0.5 V, f = 1.0 MHz)
fT
C cb
C eb
40
Max
200
200
–0.30
–0.35
–0.50
–1.0
–0.75
–0.85
–0.90
–2.0
200
6.0
100
Unit
Vdc
Vdc
Vdc
MHz
pF
pF
Rev.O 2/6


Features LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon We declare tha t the material of product compliance wi th RoHS requirements. S- Prefix for Aut omotive and Other Applications Requirin g Unique Site and Control Change Requir ements; AEC-Q101 Qualified and PPAP Cap able. Ordering Information Device LMBT 6520LT1G S-LMBT6520LT1G LMBT6520LT3G S- LMBT6520LT3G MAXIMUM RATINGS Marking 2 Z 2Z Shipping 3000/Tape&Reel 10000/Tap e&Reel Rating Symbol Collector–Emi tter Voltage V CEO Collector–Base V oltage V CBO Emitter–Base Voltage V EBO Base Current IB Collector Curr ent — Continuous I C Value –350 350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc LMBT6520LT1G S-LMBT6520LT 1G 3 1 2 SOT–23 1 BASE 3 COLLECTOR 2 EMITTER THERMAL CHARACTERISTICS Cha racteristic Total Device Dissipation FR – 5 Board, (1) TA = 25°C Derate abov e 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumi na Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient J.
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