LMBT6517LT1G Voltage Transistor Datasheet

LMBT6517LT1G Datasheet, PDF, Equivalent


Part Number

LMBT6517LT1G

Description

High Voltage Transistor

Manufacture

Leshan Radio Company

Total Page 6 Pages
Datasheet
Download LMBT6517LT1G Datasheet


LMBT6517LT1G
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
We declare that the material of product
compliance with RoHS requirements.
Ordering Information
Device
LMBT6 517LT1G
S-LMBT6 517LT1G
LMBT6517LT3G
S-LMBT6517LT3G
Marking
1Z
1Z
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6517LT1G
S-LMBT6517LT1G
1
2
3
MAXIMUM RATINGS
SOT–23
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Base Current
IB
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
(S-)LMBT6517LT1 G= 1Z
Value
350
350
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
1
BASE
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc )
Collector–Base Breakdown Voltage
(I C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I E = 10 µAdc )
Collector Cutoff Current
( V CB = 250Vdc )
Emitter Cutoff Current
( V EB = 5.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
350
350
6.0
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
Rev.O 1/6

LMBT6517LT1G
LESHAN RADIO COMPANY, LTD.
LMBT6517LT1G , S-LMBT6517LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10mAdc, V CE = 10 Vdc)
(I C = 30 mAdc, V CE = 10 Vdc)
(I C = 50 mAdc, V CE = 10 Vdc)
(I C = 100 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation Voltage(3)
(I C = 10mAdc, I B = 1.0mAdc)
(I C = 20 mAdc, I B = 2.0 mAdc)
(I C = 30 mAdc, I B = 3.0mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
Base – Emitter Saturation Voltage
(I C = 10mAdc, I B = 1.0mAdc,)
(I C = 20mAdc, I B = 2.0mAdc,)
(I C = 30mAdc, I B = 3.0mAdc,)
Base–Emitter On Voltage
(I C = 100mAdc, V CE = 10Vdc)
hFE
VCE(sat)
VBE(sat)
V BE(on)
20
30
30
20
15
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz)
fT
Collector –Base Capacitance
(V CB = 20 Vdc, f = 1.0 MHz)
C cb
Emitter –Base Capacitance
(V EB=0.5 Vdc, f = 1.0 MHz)
C eb
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
40
Max
200
200
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
200
6.0
80
Unit
Vdc
Vdc
Vdc
MHz
pF
pF
Rev.O 2/6


Features LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon We declare th at the material of product compliance w ith RoHS requirements. Ordering Informa tion Device LMBT6 517LT1G S-LMBT6 517L T1G LMBT6517LT3G S-LMBT6517LT3G Markin g 1Z 1Z Shipping 3000/Tape&Reel 10000/ Tape&Reel LMBT6517LT1G S-LMBT6517LT1G 1 2 3 MAXIMUM RATINGS SOT–23 Rat ing Symbol Collector–Emitter Voltag e V CEO Collector–Base Voltage V C BO Emitter–Base Voltage V EBO Base Current IB Collector Current — Con tinuous I C THERMAL CHARACTERISTICS C haracteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate ab ove 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alu mina Substrate, (2) TA = 25°C Derate a bove 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temper ature DEVICE MARKING (S-)LMBT6517LT1 G= 1Z Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc 1 BASE Symbol P D RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –.
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